Zobrazeno 1 - 10
of 21 713
pro vyhledávání: '"quantum well lasers"'
Autor:
Jian Li, Chen Jiang, Hao Liu, Yang Zhang, Hao Zhai, Xin Wei, Qi Wang, Gang Wu, Chuanchuan Li, Xiaomin Ren
Publikováno v:
Advanced Photonics Research, Vol 5, Iss 7, Pp n/a-n/a (2024)
A silicon‐based room temperature (RT) continuous wave (CW) operation quantum well (QW) laser emitting at 850 nm is reported in this article. By applying the dislocation filter superlattice, the threading dislocation density of the GaAs pseudosubstr
Externí odkaz:
https://doaj.org/article/ac4d4a89d57548d1bdc63b6cefe4512e
Low-threshold visible InP quantum dot and InGaP quantum well lasers grown by molecular beam epitaxy.
Autor:
Dhingra, Pankul1,2 (AUTHOR), Muhowski, Aaron J.3 (AUTHOR), Li, Brian D.1,2 (AUTHOR), Sun, Yukun1,2 (AUTHOR), Hool, Ryan D.4 (AUTHOR), Wasserman, Daniel3 (AUTHOR), Lee, Minjoo Larry1,2 (AUTHOR) mllee@illinois.edu
Publikováno v:
Journal of Applied Physics. 3/14/2023, Vol. 133 Issue 10, p1-9. 9p.
Autor:
Liu, Hao, Jiang, Chen, Liu, Shuaicheng, Ye, Jihong, Zhai, Hao, Li, Jian, Wang, Jun, Wang, Qi, Wei, Xin, Ren, Xiaomin
Publikováno v:
In Optics Communications 1 January 2025 574
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Sokolova, Z. N.1 (AUTHOR) zina.sokolova@mail.ioffe.ru, Pikhtin, N. A1 (AUTHOR), Slipchenko, S. O.1 (AUTHOR), Asryan, L. V.2 (AUTHOR) asryan@vt.edu
Publikováno v:
Semiconductors. Feb2022, Vol. 56 Issue 2, p115-121. 7p.
Publikováno v:
Light: Science & Applications, Vol 13, Iss 1, Pp 1-12 (2024)
Abstract A reliable, efficient and electrically-pumped Si-based laser is considered as the main challenge to achieve the integration of all key building blocks with silicon photonics. Despite the impressive advances that have been made in developing
Externí odkaz:
https://doaj.org/article/393e964961074a8a968d665b37044f29
Autor:
Jiang, Chen, Liu, Hao, Wang, Jun, Ren, Xiaomin, Wang, Qi, Liu, Zhuoliang, Ma, Bojie, Liu, Kai, Ren, Ren, Zhang, Yidong, Cai, Shiwei, Huang, Yongqing
Room-temperature continuous-wave operation of InGaAs/AlGaAs quantum well lasers directly grown on on-axis silicon (001) has been demonstrated. A 420 nm thick GaAs epilayer completely free of antiphase domains was initially grown on the silicon substr
Externí odkaz:
http://arxiv.org/abs/2204.01462
Autor:
Woods, Jonathan R. C., Gorecki, Jon, Bek, Roman, Richardson, Stephen C., Daykin, Jake, Hooper, Grace, Branagan-Harris, Emelia, Tropper, Anne C., Wilkinson, James S., Jetter, Michael, Apostolopoulos, Vasilis
Coherent laser arrays compatible with silicon photonics are demonstrated in a waveguide geometry in epitaxially grown semiconductor membrane quantum well lasers transferred on substrates of silicon carbide and oxidised silicon; we record lasing thres
Externí odkaz:
http://arxiv.org/abs/2201.08674