Zobrazeno 1 - 10
of 7 060
pro vyhledávání: '"quantum transport"'
Autor:
Samuel L. Jacob, Laetitia P. Bettmann, Artur M. Lacerda, Krissia Zawadzki, Stephen R. Clark, John Goold, Juan José Mendoza-Arenas
Publikováno v:
Frontiers in Physics, Vol 12 (2024)
An environment interacting with a quantum system can enhance transport through the suppression of quantum effects responsible for localization. In this paper, we study the interplay between bulk dephasing and a linear potential in a boundary-driven t
Externí odkaz:
https://doaj.org/article/693e55d2b9834ad4aa6f0eb55326dac8
Publikováno v:
Next Materials, Vol 4, Iss , Pp 100116- (2024)
The enhancement of photogalvanic effect (PGE) is vital for the application of optoelectronics. We use the ab initio quantum transport method to study the possible enhancement of PGE by importing a lateral PtSSe-HfSSe heterojunction. Under irradiation
Externí odkaz:
https://doaj.org/article/2b9df03adb5c405f80c9fc9eaa0cb298
Autor:
Hazem Abdelsalam, Omar H. Abd-Elkader, Mahmoud A.S. Sakr, Nahed H. Teleb, Yushen Liu, Qinfang Zhang
Publikováno v:
Results in Physics, Vol 61, Iss , Pp 107750- (2024)
Two-dimensional (2D) heterostructures open the door toward novel applications, such as multiterminal transistors, by integrating the properties of the participant materials. Here we construct 2D heterostars from zigzag-triangular graphene (ZTG) and g
Externí odkaz:
https://doaj.org/article/39488abe971545efa9105b14c8b65e56
Autor:
Knox Craig S., Vaughan Matthew T., Fox Nathan R., Yagmur Ahmet, Sasaki Satoshi, Cunningham John E., Linfield Edmund H., Davies Alexander G., Freeman Joshua R.
Publikováno v:
Nanophotonics, Vol 13, Iss 10, Pp 1843-1850 (2024)
We have performed an investigation into the optical conductivity and magnetotransport properties of top-gated devices patterned on the topological insulator Bi2Se3 in order to determine the relative effects of the different carrier species that exist
Externí odkaz:
https://doaj.org/article/71d66cb310484f2d8665a7b869162a27
Publikováno v:
Micromachines, Vol 15, Iss 10, p 1270 (2024)
We study field effect nanotransistor devices in the Si/SiO2 material system which are based on lateral resonant tunneling between two parallel conduction channels. After introducing a simple piecewise linear potential model, we calculate the quantum
Externí odkaz:
https://doaj.org/article/cb9dac8e515d4bb08ab1f7c0ae6020be
Akademický článek
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Publikováno v:
Entropy, Vol 26, Iss 8, p 672 (2024)
Semiconductor superlattices are periodic nanostructures consisting of epitaxially grown quantum wells and barriers. For thick barriers, the quantum wells are weakly coupled and the main transport mechanism is a sequential resonant tunneling of electr
Externí odkaz:
https://doaj.org/article/737873cd22bd48d78b268f3d0ca21c09
Publikováno v:
Nanomaterials, Vol 14, Iss 14, p 1210 (2024)
We study the electron tunneling (ET) and local Andreev reflection (AR) processes in a quantum dot (QD) coupled to the left and right ferromagnetic leads with noncollinear ferromagnetisms. In particular, we consider that the QD is also side-coupled to
Externí odkaz:
https://doaj.org/article/207aaa5fc2934fa28c8e3516bb938438
Publikováno v:
Molecules, Vol 29, Iss 13, p 3207 (2024)
Poly(p-phenylene ethynylene) (PPE) molecular wires are one-dimensional materials with distinctive properties and can be applied in electronic devices. Here, the approach called first-principles quantum transport is utilized to investigate the PPE mol
Externí odkaz:
https://doaj.org/article/3843227ca9de4968a4e7bb9c18227a99
Publikováno v:
Frontiers in Physics, Vol 11 (2024)
Introduction: Magnetic skyrmions hold great promise for realizing compact and stable memory devices that can be manipulated at very low energy costs via electronic current densities.Methods: In this work, we extend a recently introduced method to des
Externí odkaz:
https://doaj.org/article/232ec14a59224813bba022325565517d