Zobrazeno 1 - 10
of 7 175
pro vyhledávání: '"quantum transport"'
Publikováno v:
Next Materials, Vol 4, Iss , Pp 100116- (2024)
The enhancement of photogalvanic effect (PGE) is vital for the application of optoelectronics. We use the ab initio quantum transport method to study the possible enhancement of PGE by importing a lateral PtSSe-HfSSe heterojunction. Under irradiation
Externí odkaz:
https://doaj.org/article/2b9df03adb5c405f80c9fc9eaa0cb298
Autor:
Knox Craig S., Vaughan Matthew T., Fox Nathan R., Yagmur Ahmet, Sasaki Satoshi, Cunningham John E., Linfield Edmund H., Davies Alexander G., Freeman Joshua R.
Publikováno v:
Nanophotonics, Vol 13, Iss 10, Pp 1843-1850 (2024)
We have performed an investigation into the optical conductivity and magnetotransport properties of top-gated devices patterned on the topological insulator Bi2Se3 in order to determine the relative effects of the different carrier species that exist
Externí odkaz:
https://doaj.org/article/71d66cb310484f2d8665a7b869162a27
Autor:
Hazem Abdelsalam, Omar H. Abd-Elkader, Mahmoud A.S. Sakr, Nahed H. Teleb, Yushen Liu, Qinfang Zhang
Publikováno v:
Results in Physics, Vol 61, Iss , Pp 107750- (2024)
Two-dimensional (2D) heterostructures open the door toward novel applications, such as multiterminal transistors, by integrating the properties of the participant materials. Here we construct 2D heterostars from zigzag-triangular graphene (ZTG) and g
Externí odkaz:
https://doaj.org/article/39488abe971545efa9105b14c8b65e56
Publikováno v:
Entropy, Vol 26, Iss 8, p 672 (2024)
Semiconductor superlattices are periodic nanostructures consisting of epitaxially grown quantum wells and barriers. For thick barriers, the quantum wells are weakly coupled and the main transport mechanism is a sequential resonant tunneling of electr
Externí odkaz:
https://doaj.org/article/737873cd22bd48d78b268f3d0ca21c09
Publikováno v:
Nanomaterials, Vol 14, Iss 14, p 1210 (2024)
We study the electron tunneling (ET) and local Andreev reflection (AR) processes in a quantum dot (QD) coupled to the left and right ferromagnetic leads with noncollinear ferromagnetisms. In particular, we consider that the QD is also side-coupled to
Externí odkaz:
https://doaj.org/article/207aaa5fc2934fa28c8e3516bb938438
Publikováno v:
Molecules, Vol 29, Iss 13, p 3207 (2024)
Poly(p-phenylene ethynylene) (PPE) molecular wires are one-dimensional materials with distinctive properties and can be applied in electronic devices. Here, the approach called first-principles quantum transport is utilized to investigate the PPE mol
Externí odkaz:
https://doaj.org/article/3843227ca9de4968a4e7bb9c18227a99
Publikováno v:
Frontiers in Physics, Vol 11 (2024)
Introduction: Magnetic skyrmions hold great promise for realizing compact and stable memory devices that can be manipulated at very low energy costs via electronic current densities.Methods: In this work, we extend a recently introduced method to des
Externí odkaz:
https://doaj.org/article/232ec14a59224813bba022325565517d
Autor:
Khayal K. Ahmed, Daron Q. Muheddin, Pshko A. Mohammed, Gulstan S. Ezat, Ary R. Murad, Bahez Y. Ahmed, Sarkawt A. Hussen, Taha Y. Ahmed, Samir M. Hamad, Omed Gh. Abdullah, Shujahadeen B. Aziz
Publikováno v:
Results in Physics, Vol 56, Iss , Pp 107239- (2024)
In recent years, the optical capabilities of polymer composites have dominated the marketplace for applications in optoelectronic and energy devices. Supercapacitors, light-emitting displays, optical waveguide sensors, and organic photovoltaic cells
Externí odkaz:
https://doaj.org/article/1bc7cbf2b0274c258bdf5119616d9e8f
Publikováno v:
Results in Physics, Vol 56, Iss , Pp 107211- (2024)
In this work we demonstrate how the current phase transition of atomic Bose–Einstein condensates in a toroidal trap can be controlled by applying a zero-mean oscillatory driving field. Here, the current phase transition means that the long-time ave
Externí odkaz:
https://doaj.org/article/9b611f76cce247e59461bfc3dbd10dc1
Publikováno v:
Nanomaterials, Vol 14, Iss 11, p 916 (2024)
Silicon qubits based on specific SOI FinFETs and nanowire (NW) transistors have demonstrated promising quantum properties and the potential application of advanced Si CMOS devices for future quantum computing. In this paper, for the first time, the q
Externí odkaz:
https://doaj.org/article/647b1796d77c4fdf8ca9aae13b0934e8