Modeling negative and positive temperature dependence of the gate leakage current in GaN high-electron mobility transistors

Autor: Ling-Feng Mao

Publikováno v: ETRI Journal, Vol 44, Iss 3, Pp 504-511 (2022)

Monte Carlo simulations show that, as temperature increases, the average kinetic energy of channel electrons in a GaN transistor first decreases and then increases. According to the calculations, the relative energy change reaches 40%. This change le

Externí odkaz: https://doaj.org/article/d3cf6ce203834e97874ed05bc116ac77

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The Fine-Structure Constant as a Ruler for the Band-Edge Light Absorption Strength of Bulk and Quantum-Confined Semiconductors

Autor: Prins, P. Tim, Alimoradi Jazi, Maryam, Killilea, Niall A., Evers, Wiel H., Geiregat, Pieter, Heiss, Wolfgang, Houtepen, Arjan J., Delerue, Christophe, Hens, Zeger, Vanmaekelbergh, Daniel, Condensed Matter and Interfaces, Sub Inorganic Chemistry and Catalysis, Sub Condensed Matter and Interfaces

Publikováno v: Nano Letters
Nano Letters, 2021, 21 (22), pp.9426-9432. ⟨10.1021/acs.nanolett.1c02682⟩
Nano Letters, American Chemical Society, 2021, ⟨10.1021/acs.nanolett.1c02682⟩
Nano Letters: a journal dedicated to nanoscience and nanotechnology, 21(22)
NANO LETTERS
Nano Letters, 21(22), 9426. American Chemical Society

International audience; Low-dimensional semiconductors have found numerous applications in optoelectronics. However, a quantitative comparison of the absorption strength of lowdimensional versus bulk semiconductors has remained elusive. Here, we repo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb36f8b00f4a14ed266fecd25fe3e06c
https://hal.science/hal-03430478/file/fine_structure_abs_NL_21.pdf