Zobrazeno 1 - 10 of 30 pro vyhledávání: '"puolijohteet"'
1
Heavy-Ion-Induced Defects in Degraded SiC Power MOSFETs
Autor: Corinna Martinella, Marianne Etzelmüller Bathen, Arto Javanainen, Ulrike Grossner
Cathodoluminescence spectroscopy is used to investigate the formation of point- and extended defects in SiC power MOSFETs exposed to heavy-ions. Devices showing single event leakage current (SELC) effects are analysed and compared to pristine samples
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50e4e0a8044746e6fd66cf139f91d4c9
http://urn.fi/URN:NBN:fi:jyu-202307064411
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2
Conduction properties of semiconductive multiwalled carbon nanotubes
Autor: M. Ahlskog, O. Herranen, J. Leppäniemi, D. Mtsuko
Publikováno v: Ahlskog, M, Herranen, O, Leppäniemi, J & Mtsuko, D 2022, ' Conduction properties of semiconductive multiwalled carbon nanotubes ', European Physical Journal B: Condensed Matter and Complex Systems, vol. 95, no. 8, 130 . https://doi.org/10.1140/epjb/s10051-022-00392-z
We have undertaken low-temperature conduction measurements on arc-discharge synthesized, semiconducting multiwalled carbon nanotubes (MWNT). The diameters of these are in the range 2.5–10 nm, corresponding to the sizes just above single-walled carb
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6e7372ef05a25633b484fe1223abdde0
https://cris.vtt.fi/en/publications/9778fd06-2479-4b8f-b203-273906f23012
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3
Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies
Autor: Arto Javanainen, C. Martinella, R. Gaillard, Roger Stark, Yacine Kadi, Maria Kastriotou, Carlo Cazzaniga, Andrea Coronetti, Ruben Garcia Alia, Ulrike Grossner
Publikováno v: IEEE Transactions on Nuclear Science, 68 (5)
IEEE Transactions on Nuclear Science
Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench and double-trench architectures. The results were used to calculate the failure cross-sections and the failure in time (FIT) rat
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3ee1e2df61ae728c8447cb3d13e32e93
https://doi.org/10.1109/tns.2021.3065122
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4
Isotopic Enriched and Natural SiC Junction Barrier Schottky Diodes Under Heavy Ion Irradiation
Autor: Ketil Roed, Dag Oistein Eriksen, Bruno Ceccaroli, Corinna Martinella, Arto Javanainen, Sergey Reshanov, Silvia Massetti
The radiation tolerance of isotopic enriched and natural silicon carbide junction barrier Schottky diodes are compared under heavy ion irradiation. Both types of devices experience leakage current degradation as well as single-event burnout events. T
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::49804c6d20426c35c8cd4e631ba30ca3
http://cds.cern.ch/record/2824344
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5
Temperature dependence of recombination radiation in semiconductor nanostructures with quantum dots containing impurity complexes
Autor: V.D. Krevchik, A.V. Razumov, M.B. Semenov, I.M. Moyko, A.V. Shorokhov
Temperature dependence of the spectral intensity of recombination radiation in a quasi-zero-dimensional structure, containing impurity complexes “A++e” (a hole localized on a neutral acceptor, interacting with an electron localized in the ground
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ace26b7ebb8ed3442cf58145b81d002
http://urn.fi/URN:NBN:fi:jyu-202202091473
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6
Improved stability of black silicon detectors using aluminum oxide surface passivation
Autor: Heikki Kettunen, Mikko A. Juntunen, Hele Savin, Mikko Rossi, Juha Heinonen, Jukka Jaatinen, J. Heino, Antti Haarahiltunen
Publisher Copyright: © 2021 ESA and CNES We have studied how high-energy electron irradiation (12 MeV, total dose 66 krad(Si)) and long term humidity exposure (75%, 75 °C, 500 hours) influence the induced junction black silicon or planar photodiode
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e11e28d678605c027425d61de48ec330
http://hdl.handle.net/10138/355287
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8
Heavy-Ion Microbeam Studies of Single-Event Leakage Current Mechanism in SiC VD-MOSFETs
Autor: Thomas Ziemann, Kay-Obbe Voss, Ruben Garcia Alia, Arto Javanainen, Roger Stark, Corinna Martinella, Yacine Kadi, Alexander Tsibizov, Ulrike Grossner
Publikováno v: IEEE Transactions on Nuclear Science, 67 (7)
IEEE transactions on nuclear science 67(7), 1381-1389 (2020). doi:10.1109/TNS.2020.3002729
Heavy-ion microbeams are employed for probing the radiation-sensitive regions in commercial silicon carbide (SiC) vertical double-diffused power (VD)-MOSFETs with micrometer accuracy. By scanning the beam spot over the die, a spatial periodicity was
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4e29a69548e24c38dc7920541a1f0ce
https://hdl.handle.net/20.500.11850/429961
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9
Polymorphic chiral squaraine crystallites in textured thin films
Autor: Oriol Arteaga, Julian J. Holstein, Frank Balzer, Jennifer Zablocki, Dirk Hertel, Jana Anhäuser, Manuela Schiek, Guido H. Clever, Kari Rissanen, Arne Lützen, Rakesh Puttreddy, Klaus Meerholz
Publikováno v: Zablocki, J, Arteaga, O, Balzer, F, Hertel, D, Holstein, J J, Clever, G, Anhäuser, J, Puttreddy, R, Rissanen, K, Meerholz, K, Lützen, A & Schiek, M 2020, ' Polymorphic chiral squaraine crystallites in textured thin films ', Chirality, vol. 32, no. 5, pp. 619-631 . https://doi.org/10.1002/chir.23213
Chirality 32(5), 619-631 (2020). doi:10.1002/chir.23213
Dipòsit Digital de la UB
Universidad de Barcelona
Chirality 32(5), 619 - 631 (2020). doi:10.1002/chir.23213
An enantiomerically pure (R)‐2‐methylpyrrolidine‐based anilino squaraine crystallizes in two chiral polymorphs adopting a monoclinic C2 and an orthorhombic P212121 structure, respec
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bcf5c07f8cbe054c60de92b6d1792a02
http://hdl.handle.net/2445/174551
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10
Depth profiling of composition in MBE grown III--V/Ge solar cells
Autor: Mäkelä, Severi
Multijunction solar cells have shown their ability to achieve very high solar energy conversion efficiencies, making them optimal for energy production on Earth and in space. Many multijunction solar cell architectures use III–V semiconductor mater
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______4853::4be679cd0e4710c42d080b0f297ed52f
https://trepo.tuni.fi/handle/10024/123143
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