Charge-changing interactions probing point-proton radii of nuclei

Autor: Yamaki S., Kouno J., Nishimura D., Nagashima M., Takechi M., Sato K., Abe K., Abe Y., Fukuda M., Furuki H., Hachiuma I., Homma A., Ichihashi N., Ichikawa C., Inaba N., Ito T., Iwamoto K., Izumikawa T., Kamisho Y., Kikuchi N., Kinno S., Kitagawa A., Kojima T., Kuboki T., Mihara M., Miyazawa S., Momota S., Morita Y., Nagae D., Nakamura Y., Namihira K., Nishikiori R., Nishizuka I., Niwa T., Ogura M., Ohkuma Y., Ohtsubo T., Okada S., Ohno J., Ozawa A., Saito Y., Sakai T., Sato S., Sera D., Suzaki F., Suzuki S., Suzuki T., Taguchi M., Uenishi H., Wakabayashi M., Watanabe D., Yaguchi M., Yasumoto S., Yamaguchi T.

Publikováno v: EPJ Web of Conferences, Vol 66, p 03099 (2014)

The question of whether charge-changing interactions can be used to probe point-proton radii of nuclei remains unanswered. Charge-changing cross sections, σcc, were systematically investigated using stable and unstable nuclear beams of intermediatee

Externí odkaz: https://doaj.org/article/9f519e0fe80148aebe9379223fa9c3ef

Probing Point Defects in Stacks of Ultrathin High-k Metal Oxides on Semiconductors by Electron Spin Resonance: The Si/HfO2 vs the Ge/HfO2 System

Autor: Valery V. Afanas'ev, Andre Stesmans, Katrijn Clémer

Publikováno v: ECS Transactions. 1:347-360

Combined electron spin resonance and electrical analysis of (100)Si/HfO2 and (100)Ge/HfO2 interfaces reveals dramatic differences in their interface defect properties. No interfacial Ge dangling bond type defects could be revealed. The observed param

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ae9ea7e2005284029d0f99f1eafb48a8
https://doi.org/10.1149/1.2209284

Quantum Chemical Analysis of the Dielectric Constant Concept at Atomic Scale: an Interaction of Probing Point Charges with Silica Cristobalite-Like Cluster

Autor: Volodymyr D. Khavryuchenko, Vladyslav V. Lisnyak, Oleksiy V. Khavryuchenko

Publikováno v: Zeitschrift für Naturforschung A. 61:672-674

The quantum chemically simulated interaction of probing point charges with the silica cristobalite-like cluster Si48O122H52 [= Si48O70(OH)52] proves that the macroscopic dielectric constant can not be used at atomic scale distances due to quantum che

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2b9bbfcb0984792a4ba766e3859a8662
https://doi.org/10.1515/zna-2006-1209

Probing point defects inBa(B1/3B'2/3)O3 by ESR, PAS and dielectric spectroscopy

Autor: Kolodiazhnyi T., Annino G., Younker A., Malysz P., Mascher P., Haneda H.

Publikováno v: Journal of the European Ceramic Society 26 (2006): 1921–1924.
info:cnr-pdr/source/autori:Kolodiazhnyi T., Annino G., Younker A., Malysz P., Mascher P., Haneda H./titolo:Probing point defects inBa(B1%2F3B''2%2F3)O3 by ESR, PAS and dielectric spectroscopy/doi:/rivista:Journal of the European Ceramic Society/anno:2006/pagina_da:1921/pagina_a:1924/intervallo_pagine:1921–1924/volume:26

In contrast to simple ternary perovskites (e.g., SrTiO3 and BaTiO3), the defect chemistry model of complex barium perovskites with general formula Ba(B'1/3B''2/3)O3 has yet to be developed. In an attempt to gain an insight into a point defect chemist

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::605648bfbe7e4827f6723e65f2c76fda
http://www.cnr.it/prodotto/i/39608

Probing Point Defects in Stacks of Ultrathin High-k Metal Oxides on Semiconductors by Electron Spin Resonance: The Si/HfO2 vs the Ge/HfO2 System

Autor: Stesmans, Andre, Afanas, Valery, and, ev

Publikováno v: ECS Transactions; July 2006, Vol. 1 Issue: 5 p347-360, 14p