Zobrazeno 1 - 10
of 619
pro vyhledávání: '"pre-patterned substrate"'
Conference
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Autor:
Hao-Wei Han, Hsun-Wen Wang, Hsin-Chu Chen, Liang-Hao Jin, Chien-Chung Lin, Yu-Lin Tsai, P. C. Tseng, Peichen Yu, Min-An Tsai, Hao-Chung Kuo
Publikováno v:
2011 37th IEEE Photovoltaic Specialists Conference.
Light trapping in amorphous silicon thin film solar cells has been an intensive study owing to the low absorption coefficient in near-infrared. We demonstrate a frontal pre-patterned substrate (PPS) on amorphous silicon solar cells, utilizing scalabl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecd82480590b03d3d9fd377887146344
https://doi.org/10.1109/pvsc.2011.6186089
https://doi.org/10.1109/pvsc.2011.6186089
Autor:
Han, Hao-Wei, 韓皓惟
99
Light trapping in amorphous silicon thin film solar cells has been an intensive study owing to the low absorption coefficient in near-infrared. We demonstrate a frontal pre-patterned substrate (PPS) on amorphous silicon solar cells, utilizing
Light trapping in amorphous silicon thin film solar cells has been an intensive study owing to the low absorption coefficient in near-infrared. We demonstrate a frontal pre-patterned substrate (PPS) on amorphous silicon solar cells, utilizing
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/97157994324478012762
Publikováno v:
MRS Proceedings. 570
We present an investigation on the spatial compositional variation in InGaP layers grown by chemical beam epitaxy (CBE) on pre-patterned substrates. Neighboring regions with 190 meV bandgap discontinuity are observed with the growth at 500°C. The de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b121cd276560690968c39b3c4a55212
https://doi.org/10.1557/proc-570-79
https://doi.org/10.1557/proc-570-79
Conference
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Autor:
Alexey V. Novikov, Zhanna V. Smagina, Margarita V. Stepikhova, Vladimir A. Zinovyev, Sergey A. Rudin, Sergey A. Dyakov, Ekaterina E. Rodyakina, Alexey V. Nenashev, Sergey M. Sergeev, Artem V. Peretokin, Anatoly V. Dvurechenskii
Publikováno v:
Nanomaterials, Vol 11, Iss 4, p 909 (2021)
A new approach to improve the light-emitting efficiency of Ge(Si) quantum dots (QDs) by the formation of an ordered array of QDs on a pit-patterned silicon-on-insulator (SOI) substrate is presented. This approach makes it possible to use the same pre
Externí odkaz:
https://doaj.org/article/d17231db5a4c4a8fb674557600bcd5fa
Autor:
Han, Hao-Wei, Tsai, Min-An, Tseng, Ping-Chen, Tsai, Yu-Lin, Jin, Liang-Hao, Chen, Hsin-Chu, Wang, Hsun-Wen, Lin, Chien-Chung, Yu, Peichen, Kuo, Hao-Chung
Publikováno v:
2011 37th IEEE Photovoltaic Specialists Conference; 1/ 1/2011, p000866-000869, 4p
Autor:
Sergey A. Dyakov, A. V. Dvurechenskii, Sergey M. Sergeev, Vladimir Zinovyev, Artem V. Peretokin, S. A. Rudin, M. V. Stepikhova, A. V. Novikov, A. V. Nenashev, Zhanna Smagina, E. E. Rodyakina
Publikováno v:
Nanomaterials
Volume 11
Issue 4
Nanomaterials, Vol 11, Iss 909, p 909 (2021)
Volume 11
Issue 4
Nanomaterials, Vol 11, Iss 909, p 909 (2021)
A new approach to improve the light-emitting efficiency of Ge(Si) quantum dots (QDs) by the formation of an ordered array of QDs on a pit-patterned silicon-on-insulator (SOI) substrate is presented. This approach makes it possible to use the same pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cde9422ab039c73326a4c34cd7b3bf68
https://pubmed.ncbi.nlm.nih.gov/33918328
https://pubmed.ncbi.nlm.nih.gov/33918328
Publikováno v:
Scopus-Elsevier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::d15a42db2be699ef95935f84ac28080a
http://www.scopus.com/inward/record.url?eid=2-s2.0-0033310692&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0033310692&partnerID=MN8TOARS
Akademický článek
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