Zobrazeno 1 - 10
of 477
pro vyhledávání: '"power transistor"'
Publikováno v:
Communications, Vol 25, Iss 3, Pp C48-C55 (2023)
This paper discusses the issue related to the switching regulators operated at high switching frequencies, where it is necessary to eliminate the influence of parasitic components of the converter's main circuit. In more detail it deals with the node
Externí odkaz:
https://doaj.org/article/07087b233ed042a3b679d0976219bd55
Publikováno v:
Nonlinear Engineering, Vol 10, Iss 1, Pp 555-562 (2022)
To overcome the problem of energy losses in the electrical circuits and to improve the energy conversion efficiency, it is necessary to increase the power switch frequency and reduce the open resistance of the power switch. Moreover, based on energy
Externí odkaz:
https://doaj.org/article/5e9aa0efe37848558ade93c52a197ab4
Publikováno v:
Engineering Reports, Vol 4, Iss 5, Pp n/a-n/a (2022)
Abstract In this article, we compare several concepts for gallium‐nitride (GaN) power high electron mobility transistor (HEMT) packages in terms of their drain‐to‐source parasitic inductance and resistance values. Unlike in previous studies, ho
Externí odkaz:
https://doaj.org/article/8156b1040f8b4df2b8016254400ccc71
Publikováno v:
IEEE Access, Vol 9, Pp 11776-11786 (2021)
In order to address the problem of power transistor fault in interleaved boost converter (IBC) of any interleaved phase, we propose a real-time fast diagnosis and fault-tolerant method of power transistor. With the single boost converter as the objec
Externí odkaz:
https://doaj.org/article/e064a92b95a94100b1d5a4014d6d2cb5
Publikováno v:
Micromachines, Vol 14, Iss 2, p 426 (2023)
An analytically separated neuro-space mapping (Neuro-SM) model of power transistors is proposed in this paper. Two separated mapping networks are introduced into the new model to improve the characteristics of the DC and AC, avoiding interference of
Externí odkaz:
https://doaj.org/article/a80ae98168b2423ab8474171277fea33
Akademický článek
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Publikováno v:
IEEE Access, Vol 8, Pp 181420-181431 (2020)
A novel, large-signal behavioral modeling methodology for Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs), based on the canonical piecewise-linear (CPL) functions, is presented in this paper. The proposed new model employs the poly-h
Externí odkaz:
https://doaj.org/article/574dd6b1bb00406e904f6957f11aa600
Publikováno v:
Sensors, Vol 22, Iss 19, p 7223 (2022)
Integrated power ICs acting as smart power switches for automotive or industrial applications are often subjected to active thermal cycling. Consequently, they undergo significant self-heating and are prone to various failure mechanisms related to th
Externí odkaz:
https://doaj.org/article/be16d5b7903048f0b1a775a6a563f2e3
Autor:
Hongkeng Zhu, Elison Matioli
Publikováno v:
IEEE Transactions on Power Electronics. 38:8045-8050
Accurate characterization of the dynamic ON-resistance (RON) degradation is important to predict conduction losses for gallium nitride high-electron-mobility transistors (GaN HEMTs). However, even for the same device, many inconsistent results of dyn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b473a45b4f1a54871917519629c7f29
https://doi.org/10.1109/tpel.2023.3268890
https://doi.org/10.1109/tpel.2023.3268890
Akademický článek
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