Zobrazeno 1 - 10
of 9 373
pro vyhledávání: '"piezoresistance"'
Autor:
Seo, Jeong-Woo1 (AUTHOR) jwseo02@kiom.re.kr, Kim, Hyeonjong2 (AUTHOR) koriente@g.kmou.ac.kr, Kim, Jaeuk U.1,3 (AUTHOR) jaeukkim@kiom.re.kr, Do, Jun-Hyeong1,3,4 (AUTHOR) jhdo@kiom.re.kr, Ko, Junghyuk5 (AUTHOR) jko@kmou.ac.kr
Publikováno v:
Sensors (14248220). Apr2024, Vol. 24 Issue 7, p2363. 10p.
Autor:
Fakhri, Elham1 (AUTHOR) elhamf20@ru.is, Plugaru, Rodica2 (AUTHOR), Sultan, Muhammad Taha1,3 (AUTHOR), Hanning Kristinsson, Thorsteinn1 (AUTHOR), Örn Árnason, Hákon1 (AUTHOR), Plugaru, Neculai2 (AUTHOR), Manolescu, Andrei1 (AUTHOR), Ingvarsson, Snorri3 (AUTHOR), Svavarsson, Halldor Gudfinnur1 (AUTHOR) elhamf20@ru.is
Publikováno v:
Sensors (14248220). Sep2022, Vol. 22 Issue 17, p6340. 10p.
Akademický článek
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Autor:
Ghosh, S., Lane, C., Ronning, F., Bauer, E. D., Thompson, J. D., Zhu, J. -X., Rosa, P. F. S., Thomas, S. M.
Piezoresistance, the change of a material's electrical resistance ($R$) in response to an applied mechanical stress ($\sigma$), is the driving principle of electromechanical devices such as strain gauges, accelerometers, and cantilever force sensors.
Externí odkaz:
http://arxiv.org/abs/2206.14073
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 15, Iss 1, Pp 376-384 (2024)
Strain sensors are sensitive to mechanical deformations and enable the detection of strain also within integrated electronics. For flexible displays, the use of a seamlessly integrated strain sensor would be beneficial, and graphene is already in use
Externí odkaz:
https://doaj.org/article/9afbc81a41ad49ccaf10cc121d95bde2
Publikováno v:
Sensors, Vol 24, Iss 7, p 2363 (2024)
A force plate is mainly used in biomechanics; it aims to measure the ground reaction force in a person’s walking or standing position. In this study, a large-area force mat of the piezoresistance sensing type was developed, and a deep-learning-base
Externí odkaz:
https://doaj.org/article/e6cf9429b3ba45acbb02638622ff8b6d
Akademický článek
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Autor:
Nakanishi, Ryo1 (AUTHOR), Morikawa, Ryo1 (AUTHOR), Kawai, Masashi1 (AUTHOR), Nakahara, Takumi1 (AUTHOR), Toriyama, Toshiyuki1 (AUTHOR) toriyama@se.ritsumei.ac.jp
Publikováno v:
Electrical Engineering in Japan. Sep2023, Vol. 216 Issue 3, p1-12. 12p.
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 325-336 (2023)
The field of piezoresistance has mainly advanced through experimental research; however, the improved accuracy of simulations and the emergence of new materials have increased the importance of simulations in this field. This review discusses the met
Externí odkaz:
https://doaj.org/article/65b8422ae1184fc2be88cda58b1c46b5
Publikováno v:
IEEE Access, Vol 12, Pp 99094-99109 (2024)
P-type silicon nanowires (SiNWs) have attracted significant attention for their potential in miniaturizing sensing devices, attributed to the observed giant piezoresistive (PZR) effects. However, the application of these advantageous PZR properties o
Externí odkaz:
https://doaj.org/article/6b43f12bc8364648be2034965bd5f36d