Zobrazeno 1 - 10
of 108
pro vyhledávání: '"photoconductivity decay"'
Autor:
Wei Cai, Honglong Ning, Shangxiong Zhou, Zhennan Zhu, Rihui Yao, Jianqiu Chen, Ruiqiang Tao, Zhiqiang Fang, Xubing Lu, Junbiao Peng
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1140-1144 (2019)
Solution-processed oxide dielectrics are widely studied as alternatives to SiO2, SiNx in thin film transistors for high capacitance and low energy consuming. However, it's still a challenge to achieve high quality of solution-processed oxide dielectr
Externí odkaz:
https://doaj.org/article/594b4840b3bb49cb85abc88fcd520b67
Autor:
Huansong Tang, Kuankuan Lu, Zhuohui Xu, Honglong Ning, Dengming Yao, Xiao Fu, Huiyun Yang, Dongxiang Luo, Rihui Yao, Junbiao Peng
Publikováno v:
Micromachines, Vol 12, Iss 9, p 1044 (2021)
The praseodymium-doped indium-zinc-oxide (PrIZO) thin film transistor (TFT) shows broad application prospects in the new generation of display technologies due to its high performance and high stability. However, traditional device performance evalua
Externí odkaz:
https://doaj.org/article/fe96ce0fb52748c9b859c84d5c60cfdb
Autor:
S. P. Kobeleva, I. M. Anfimov, I. V. Schemerov, L. P. Kholodny, I. V. Borzikh, V. V. Ptashinsty
Publikováno v:
Standartnye Obrazcy, Vol 0, Iss 1, Pp 16-22 (2017)
A comparison of two methods for measurement of the free carrier recombination lifetime in the unpassivated samples of high resistivity n-type silicon single crystalls (reference samples of "GIREDMET") was made. The methods were based on the photocond
Externí odkaz:
https://doaj.org/article/816d2f1ccd5d48e39a4777c002e11970
Autor:
Shiben Hu, Kuankuan Lu, Honglong Ning, Rihui Yao, Yanfen Gong, Zhangxu Pan, Chan Guo, Jiantai Wang, Chao Pang, Zheng Gong, Junbiao Peng
Publikováno v:
Nanomaterials, Vol 11, Iss 2, p 522 (2021)
In this work, we performed a systematic study of the physical properties of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O2/(Ar+O2) flow ratios, and annealing temperatures. X-ray reflectivity (XR
Externí odkaz:
https://doaj.org/article/b57bfc71ec9949679ca89538c3c746f4
Autor:
Junbiao Peng, Ruiqiang Tao, Xubing Lu, Zhou Shangxiong, Wei Cai, Zhu Zhennan, Rihui Yao, Honglong Ning, Zhiqiang Fang, Chen Jianqiu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1140-1144 (2019)
Solution-processed oxide dielectrics are widely studied as alternatives to SiO2, SiNx in thin film transistors for high capacitance and low energy consuming. However, it's still a challenge to achieve high quality of solution-processed oxide dielectr
Publikováno v:
Key Engineering Materials
Key Engineering Materials, Trans Tech Publications, 2021
Key Engineering Materials, Trans Tech Publications, 2021
International audience; Among all the material parameters of a semiconductor, the lifetime of the carriers is one of the most complex, as it is a function of the dominant recombination mechanism, the number of carriers, the structural parameters and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a7a4a825e0adc0176478c9ef28d8e3b7
https://hal.archives-ouvertes.fr/hal-03216732
https://hal.archives-ouvertes.fr/hal-03216732
Autor:
Kollarics, Sándor, Bojtor, András, Koltai, Kristóf, Márkus, Bence Gábor, Holczer, Károly, Volk, János, Klujber, Gergely, Szieberth, Máté, Simon, Ferenc
Publikováno v:
physica status solidi (b), vol 257, iss 12
Combined microwave-optical pump-probe methods are emerging to study the quantum state of spin qubit centers and the charge dynamics in semiconductors. A major hindrance is the limited bandwidth of microwave irradiation/detection circuitry which could
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______325::9fd1ddf2c87c9ca1cb76f6f3f903f6d1
https://escholarship.org/uc/item/0gj7q6ss
https://escholarship.org/uc/item/0gj7q6ss
Akademický článek
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Autor:
Zhuohui Xu, Dongxiang Luo, Xiao Fu, Rihui Yao, Honglong Ning, Kuankuan Lu, Dengming Yao, Junbiao Peng, Huansong Tang, Huiyun Yang
Publikováno v:
Micromachines
Volume 12
Issue 9
Micromachines, Vol 12, Iss 1044, p 1044 (2021)
Volume 12
Issue 9
Micromachines, Vol 12, Iss 1044, p 1044 (2021)
The praseodymium-doped indium-zinc-oxide (PrIZO) thin film transistor (TFT) shows broad application prospects in the new generation of display technologies due to its high performance and high stability. However, traditional device performance evalua
Publikováno v:
電気学会研究会資料. EDD, 電子デバイス研究会. 2017:7-11
We discussed applying the microwave photoconductivity decay (µ-PCD) to measure carrier lifetime of silicon epitaxial wafer. This paper clarified the range of evaluable substrate concentration and thickness by construction of conditional expression a