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Surface states induced weak anti-localization effect in Bi0.85Sb0.15 topological single crystal

Autor: Yogesh Kumar, V P S Awana

Publikováno v: Materials Research Express, Vol 9, Iss 5, p 056301 (2022)

We report, an experimental evidence of surface states (SS) driven magneto-transport in a Bi _0.85 Sb _0.15 single crystal. Detailed high field (up to 12T) and low temperature (down to 2 K) magneto-transport measurements are been carried out on the st

Externí odkaz: https://doaj.org/article/68e238b457d14e6b8a6b4fd3ed8dd2ac

Increased dephasing length in heavily doped GaAs

Autor: Duan, J., Wang, C., Vines, L., Rebohle, L., Helm, M., Zeng, Y.-J., Zhou, S., Prucnal, S.

Publikováno v: New Journal of Physics 23(2021), 083034

Ion implantation of S and Te followed by sub-second flash lamp annealing with peak temperature about 1100 oC is employed to obtain metallic n++-GaAs layers. The electron concentration in annealed GaAs is as high as 5×1019 cm-3, which is several time

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______4577::857bd22fcd776691619d8224e0d05c6b
https://www.hzdr.de/publications/Publ-33012-1

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Field effect enhancement in buffered quantum nanowire networks

Autor: Jordi Arbiol, Yu Liu, Tomaš Stankevič, Peter Krogstrup, Sara Martí-Sánchez, Emanuele Uccelli, Sabbir A. Khan, Saulius Vaitiekenas, Filip Krizek, Joachim E. Sestoft, Frenk Boekhout, Leo P. Kouwenhoven, Lucas Casparis, Alexander M. Whiticar, Pavel Aseev, Alexandra Fursina, Charles Marcus, R. Koops

Publikováno v: Physical review materials
Dipòsit Digital de Documents de la UAB
Universitat Autònoma de Barcelona
Physical Review Materials, 2(9)
Digital.CSIC. Repositorio Institucional del CSIC
instname
Physical Review Materials

arXiv:1802.07808v2
III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc1f8e2b7aa398c4a8828f919418d3e8
http://resolver.tudelft.nl/uuid:d8a087f0-1abd-4163-b405-1705c14a9f00