Zobrazeno 1 - 10
of 9 927
pro vyhledávání: '"p-n junction"'
Publikováno v:
German International Journal of Modern Science / Deutsche Internationale Zeitschrift für Zeitgenössische Wissenschaft. Jan2024, Issue 72, p68-71. 4p.
Publikováno v:
East European Journal of Physics, Iss 3, Pp 344-349 (2024)
In recent years, advances in optoelectronics and electronics have prioritized optimizing semiconductor device performance and reducing power consumption by modeling new semiconductor device geometries. One such innovative structure is the radial p-n
Externí odkaz:
https://doaj.org/article/201fc82abc134b2ca3d868c064c04afa
Publikováno v:
East European Journal of Physics, Iss 2, Pp 372-379 (2024)
In the fabrication of 3D p-n junctions, doping or surface modification caused by ion injection changes the electrical properties and crystal structure of the semiconductor. In addition, as the size of the semiconductor device decreases, various quant
Externí odkaz:
https://doaj.org/article/86de7706e6534dc5ad0f2c36fd8565a2
Autor:
Jeongha Eom, Yun Seong Cho, Jihun Lee, Jae Won Heo, Iva Plutnarová, Zdeněk Sofer, In Soo Kim, Dongjoon Rhee, Joohoon Kang
Publikováno v:
Small Structures, Vol 5, Iss 11, Pp n/a-n/a (2024)
Electrochemical water splitting has received tremendous attention as an eco‐friendly approach to produce hydrogen. Noble metals and their oxides are commonly used as electrocatalysts to reduce activation energy barriers for hydrogen and oxygen evol
Externí odkaz:
https://doaj.org/article/c1bea9277f344263862758d62cb30c83
Autor:
Khimmatali JURAEV, Mardonbek KHAJIEV, Aleksandr KUTLIMRATOV, Abdumirkhakim AKHMEDOV, Dilmurad SAIDOV
Publikováno v:
Medžiagotyra (2024)
In this paper, the electrophysical characteristics of the 4H-SiC p-n junction created by low-temperature diffusion of aluminum were studied. Current-voltage (I-V) characteristics are analysed, and the current transport mechanisms in 4H-SiC p-n juncti
Externí odkaz:
https://doaj.org/article/4a67bb59a428486092dd456801af6c0d
Autor:
Najmeh Mohammadi
Publikováno v:
فیزیک کاربردی ایران, Vol 13, Iss 4, Pp 93-111 (2023)
This work aimed to theoretically investigate the operation of the beta voltaic battery with the 14C radio isotopic source and several semiconductors in the p-n junction structure. For this purpose, the saturated thickness of the 14C beta source and e
Externí odkaz:
https://doaj.org/article/b25ea0dd9f724e4da8cf3d7ea509e9c3
Publikováno v:
Nanomaterials, Vol 14, Iss 18, p 1483 (2024)
The photoconductive gain theory demonstrates that the photoconductive gain is related to the ratio of carrier lifetime to carrier transit time. Theoretically, to achieve higher gain, one can either prolong the carrier lifetime or select materials wit
Externí odkaz:
https://doaj.org/article/2766aa13599d454ba8f864533443a882
Publikováno v:
Journal of Applied Physics. 12/28/2017, Vol. 122 Issue 24, p1-7. 7p.
Autor:
Wei‐Wen Shen, Yi‐Yen Hsieh, Yi‐Chun Yang, Kai‐Yuan Hsiao, Ming‐Yen Lu, Chi Wei Chou, Hsing‐Yu Tuan
Publikováno v:
Advanced Science, Vol 11, Iss 19, Pp n/a-n/a (2024)
Abstract Heterojunctions in electrode materials offer diverse improvements during the cycling process of energy storage devices, such as volume change buffering, accelerated ion/electron transfer, and better electrode structure integrity, however, ob
Externí odkaz:
https://doaj.org/article/c12ea37274864aae8e2b7e36b0d8f034
Publikováno v:
Materials & Design, Vol 239, Iss , Pp 112751- (2024)
We investigate defects in 4H-SiC p-n junction diodes introduced trough nanoindentation procedure. A nanoindentation load range between 3 mN and 15 mN was explored. Scanning Electron Microscopy and Transmission Electron Microscopy analysis are adopted
Externí odkaz:
https://doaj.org/article/b922fa1482664f56a468968030100184