Zobrazeno 1 - 10
of 9 984
pro vyhledávání: '"p-n Junction"'
Publikováno v:
German International Journal of Modern Science / Deutsche Internationale Zeitschrift für Zeitgenössische Wissenschaft. Jan2024, Issue 72, p68-71. 4p.
Publikováno v:
East European Journal of Physics, Iss 4 (2024)
This article elucidates the dependence of the ideality factor on both internal functional parameters and external factors in semiconductors at low temperatures. We have explored the influence of external factors such as temperature and external sourc
Externí odkaz:
https://doaj.org/article/ad1628e2a6db4d6f83a5bb49e6b4e50c
Publikováno v:
East European Journal of Physics, Iss 3, Pp 344-349 (2024)
In recent years, advances in optoelectronics and electronics have prioritized optimizing semiconductor device performance and reducing power consumption by modeling new semiconductor device geometries. One such innovative structure is the radial p-n
Externí odkaz:
https://doaj.org/article/201fc82abc134b2ca3d868c064c04afa
Autor:
Jeongha Eom, Yun Seong Cho, Jihun Lee, Jae Won Heo, Iva Plutnarová, Zdeněk Sofer, In Soo Kim, Dongjoon Rhee, Joohoon Kang
Publikováno v:
Small Structures, Vol 5, Iss 11, Pp n/a-n/a (2024)
Electrochemical water splitting has received tremendous attention as an eco‐friendly approach to produce hydrogen. Noble metals and their oxides are commonly used as electrocatalysts to reduce activation energy barriers for hydrogen and oxygen evol
Externí odkaz:
https://doaj.org/article/c1bea9277f344263862758d62cb30c83
Publikováno v:
East European Journal of Physics, Iss 2, Pp 372-379 (2024)
In the fabrication of 3D p-n junctions, doping or surface modification caused by ion injection changes the electrical properties and crystal structure of the semiconductor. In addition, as the size of the semiconductor device decreases, various quant
Externí odkaz:
https://doaj.org/article/86de7706e6534dc5ad0f2c36fd8565a2
Autor:
Khimmatali JURAEV, Mardonbek KHAJIEV, Aleksandr KUTLIMRATOV, Abdumirkhakim AKHMEDOV, Dilmurad SAIDOV
Publikováno v:
Medžiagotyra (2024)
In this paper, the electrophysical characteristics of the 4H-SiC p-n junction created by low-temperature diffusion of aluminum were studied. Current-voltage (I-V) characteristics are analysed, and the current transport mechanisms in 4H-SiC p-n juncti
Externí odkaz:
https://doaj.org/article/4a67bb59a428486092dd456801af6c0d
Autor:
Jia, Xinglin a, 1, Li, Jianan a, 1, Liu, Yuhong a, 1, Wang, Wenzhong a, Li, Yujie a, Liu, Lei a, Chen, Huabin a, Zhang, Guling a, b, c, Liu, Sitong d, Zhou, Qing a, c, ⁎, Wang, Lijuan a, b, ⁎
Publikováno v:
In Journal of Alloys and Compounds 15 October 2024 1002
Publikováno v:
In Applied Surface Science 15 March 2025 685
Autor:
Shen, Jianhao, Chakravarty, Swapnajit ⁎
Publikováno v:
In Photonics and Nanostructures - Fundamentals and Applications February 2025 63
Autor:
Jia, Jianhui a, Bai, Yang b, ⁎, Zhao, Jingzhong a, Li, Shujuan b, Ren, Pengrong a, Lu, Kathy c
Publikováno v:
In Sensors and Actuators: B. Chemical 1 January 2025 422