Zobrazeno 1 - 10
of 3 970
pro vyhledávání: '"p-GaN HEMT"'
Autor:
Seungmin Woo, Woojin Choi, Jaekyung Shin, Yifei Chen, Youngchan Choi, Sooncheol Bae, Hyungjin Jeon, Youngyun Woo, Youngoo Yang
Publikováno v:
Journal of Electromagnetic Engineering and Science, Vol 24, Iss 4, Pp 401-410 (2024)
Owing to the high impedance transformation ratio, the Doherty power amplifier (DPA) with a large output power back-off generally has bandwidth limitations. This study proposes an asymmetric DPA with an impedance distribution and control circuit (IDCC
Externí odkaz:
https://doaj.org/article/9739af8a21d940bf863c4828fd1db83d
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-8 (2024)
Abstract This study demonstrates a novel use of the U-Net convolutional neural network (CNN) for modeling pixel-based electrostatic potential distributions in GaN metal–insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) with var
Externí odkaz:
https://doaj.org/article/d57d1e5a071d44e0877f3e71703ba9b8
Publikováno v:
Micromachines, Vol 15, Iss 11, p 1354 (2024)
In this paper, a high-efficiency compact power amplifier is designed and fabricated with a 0.25 μm GaN high electron mobility transistor (HEMT) to meet the demands of a high integration level and high efficiency for microwave wireless power transfer
Externí odkaz:
https://doaj.org/article/d815baab71974bc38676b922292d1d41
Autor:
Jihoon Kim
Publikováno v:
Micromachines, Vol 15, Iss 11, p 1381 (2024)
This review article investigates the current status and advances in Ku-band gallium nitride (GaN) high-electron mobility transistor (HEMT) high-power amplifiers (HPAs), which are critical for satellite communications, unmanned aerial vehicle (UAV) sy
Externí odkaz:
https://doaj.org/article/0949c7fbfa36448ab9889ca932a589f7
Publikováno v:
Journal of Science: Advanced Materials and Devices, Vol 9, Iss 2, Pp 100692- (2024)
A novel AlGaN/GaN HEMT is proposed to improve its single event transient (SET) effect and breakdown characteristics. The device features an AlGaN back barrier layer and a buried P-GaN island in the back barrier layer (BP-HEMT). First, the P-GaN islan
Externí odkaz:
https://doaj.org/article/0919fb2b6cc443e898c47ea37a59cfda
Publikováno v:
IEEE Access, Vol 12, Pp 180415-180421 (2024)
This paper presents the design and implementation of a high-power amplifier (HPA) using a 250-nm gallium nitride (GaN) high electron mobility transistor (HEMT) process on a silicon carbide substrate. The HPA is engineered to optimize both output powe
Externí odkaz:
https://doaj.org/article/6f1db79871ed4804a6439b7aeac19ee3
Autor:
Manuel Fregolent, Mirco Boito, Michele Disaro, Carlo De Santi, Matteo Buffolo, Eleonora Canato, Michele Gallo, Cristina Miccoli, Isabella Rossetto, Giansalvo Pizzo, Alfio Russo, Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 703-709 (2024)
For the first time, we use electrical characterization, spectrally-resolved electroluminescence measurements and degradation tests to explain the negative activation energy of gate reliability in power GaN HEMTs with p-GaN Schottky gate. First, the o
Externí odkaz:
https://doaj.org/article/15a4697f89804f29a689c0c64e591d90
Autor:
Zihao Wang, Fei Ye, Shunshuai Duan, Xibo Yuan, Dongsheng Zuo, Yonglei Zhang, Kai Wang, Yan Li
Publikováno v:
IEEE Access, Vol 12, Pp 116442-116456 (2024)
With wider electrification in various sectors, there is a great demand for high-power, high-efficiency and high-power-density converters. Compared with conventional Si devices, the ultra-fast-switching speed of gallium nitride (GaN) high-electron-mob
Externí odkaz:
https://doaj.org/article/fc72543e629c42eab22973f95fcf290a
Publikováno v:
IEEE Access, Vol 12, Pp 111443-111450 (2024)
An X-band harmonic-tuned oscillator integrated circuit (IC) with high power and efficiency is presented, utilizing gallium nitride (GaN) high electron mobility transistor (HEMT). It consists of a feedback and load network to provide optimal harmonic
Externí odkaz:
https://doaj.org/article/a5e110f68cbf4c91af1116b778766cb5
Publikováno v:
IEEE Access, Vol 12, Pp 55551-55567 (2024)
GaN high-electron-mobility transistor (HEMT) has superior features of wide band gap, high electron mobility and very high electric field strength due to its material advantages. By using the GaN HEMT, switching frequency can be enhanced up to megaher
Externí odkaz:
https://doaj.org/article/aba3e204c4684831af1842e17a5143eb