Zobrazeno 1 - 10
of 331
pro vyhledávání: '"oxide thin-film transistors"'
Autor:
Yujia Qian, Xishuang Gu, Ting Li, Peixuan Hu, Xiaohan Liu, Junyan Ren, Lingyan Liang, Hongtao Cao
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 11, Pp n/a-n/a (2024)
Abstract At present, amorphous indium–gallium–zinc oxide (IGZO) semiconductor has become the most commonly used semiconductor material and is widely used in flat panel displays and various sensors, but its performance is greatly affected by envir
Externí odkaz:
https://doaj.org/article/bbb1fa103ff448d6b7a42638ab3afc05
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 956-964 (2024)
Metal Oxide Thin Film Transistors (MO TFTs) have garnered considerable interest in emerging Internet of Things (IoT) fields such as wearable electronics, displays, Radio Frequency Identification (RFID), and biomedical monitoring, owing to their flexi
Externí odkaz:
https://doaj.org/article/6de9b3402d204356bdda8ece0c4abf45
Autor:
Yongmin Baek, Byungjoon Bae, Jeongyong Yang, Doeon Lee, Hee Sung Lee, Minseong Park, Taegeon Kim, Sihwan Kim, Bo‐In Park, Geonwook Yoo, Kyusang Lee
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 11, Pp n/a-n/a (2023)
Abstract Artificial neural networks (ANNs) are widely used in numerous artificial intelligence‐based applications. However, the significant amount of data transferred between computing units and storage has limited the widespread deployment of ANN
Externí odkaz:
https://doaj.org/article/1304a604e30042ffb8932070e7b8eee1
Autor:
Gunel Huseynova, Amos Amoako Boampong, Kyeong Min Yu, Ye-Seul Lee, Jonghee Lee, Min-Hoi Kim, Jae-Hyun Lee
Publikováno v:
Journal of Information Display, Vol 24, Iss 1, Pp 47-56 (2023)
We present an n-doped poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) polymer and its application in n-type oxide thin-film transistors (OxTFTs) as a source and drain electrode material. A reduced molecule of a cationic dye, methyl
Externí odkaz:
https://doaj.org/article/c2b4de21b2cf4b19ab1ce59401c1e9c7
Publikováno v:
Journal of Information Display, Vol 23, Iss 4, Pp 281-286 (2022)
This paper proposes a complementary metal–oxide–semiconductor (CMOS) amplifier using low-temperature poly-Si oxide (LTPO) thin-film transistors (TFTs). The Corbino structure used in the proposed amplifier has a higher output resistance than conve
Externí odkaz:
https://doaj.org/article/8eb4ef3e474140da9fbb6189539c5171
Akademický článek
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Akademický článek
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Akademický článek
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Publikováno v:
Journal of Asian Ceramic Societies, Vol 10, Iss 3, Pp 687-695 (2022)
Relative humidity (RH) in storage environment has a great impact on the electrical performance of thin film transistors (TFTs), and the RH is critical for semiconductor manufacturing and device packaging. In this work, solution-processed indium oxide
Externí odkaz:
https://doaj.org/article/f8ee14b1968c46eca08a5f11bdc3e78e
Publikováno v:
Biomimetics, Vol 8, Iss 7, p 532 (2023)
In this study, optoelectronic synaptic transistors based on indium–gallium–zinc oxide (IGZO) with a casein electrolyte-based electric double layer (EDL) were examined. The casein electrolyte played a crucial role in modulating synaptic plasticity
Externí odkaz:
https://doaj.org/article/4b5e927e952d4ffb9217bba326ed5768