Zobrazeno 1 - 3
of 3
pro vyhledávání: '"oriented 3c-sic bulk"'
Publikováno v:
Materials
Volume 13
Issue 2
Volume 13
Issue 2
Doping of nitrogen is a promising approach to improve the electrical conductivity of 3C-SiC and allow its application in various fields. N-doped, <
110>
oriented 3C-SiC bulks with different doping concentrations were prepared via halide
110>
oriented 3C-SiC bulks with different doping concentrations were prepared via halide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::93e31e2ffa45f1291687bc5e0854d1de
Autor:
Qingfang Xu, Rong Tu, Lianmeng Zhang, Kai Liu, Song Zhang, Lixue Xia, Youfeng Lai, Qizhong Li, Meijun Yang, Takashi Goto, Mingxu Han
Publikováno v:
Materials, Vol 13, Iss 2, p 410 (2020)
Materials
Materials
Doping of nitrogen is a promising approach to improve the electrical conductivity of 3C-SiC and allow its application in various fields. N-doped, -oriented 3C-SiC bulks with different doping concentrations were prepared via halide laser chemical vapo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f07baffb4fbef3e15c0c1912f7cacdf
https://doi.org/10.3390/ma13020410
https://doi.org/10.3390/ma13020410
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