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Electron-Beam-Induced Negative Differential Transconductance Homojunction Device Based on van der Waals Materials for Functionally Complete Ternary Computing.

Autor: Andreev M; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea., Kang J; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea., Lee T; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea., Choi JW; SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea., Lee JJ; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea., Choo H; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea., Lee S; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea., Park JH; Department of Electrical and Computer Engineering, Sungkyunkwan University, Suwon 16419, Korea.

Publikováno v: ACS nano [ACS Nano] 2024 Dec 17. Date of Electronic Publication: 2024 Dec 17.

Novel approach for implementing ternary value logic devices showing negative differential transconductance characteristics by Fowler–Nordheim tunneling

Autor: Kim, Jieun, Lim, Jung Wook

Publikováno v: In Materials Science in Semiconductor Processing September 2023 164

Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications.

Autor: Lee, Minjong^1,2 (AUTHOR), Kim, Tae Wook³ (AUTHOR), Park, Chang Yong¹ (AUTHOR), Lee, Kimoon⁴ (AUTHOR), Taniguchi, Takashi⁵ (AUTHOR), Watanabe, Kenji⁵ (AUTHOR), Kim, Min-gu^1,6 (AUTHOR) mgk@inha.ac.kr, Hwang, Do Kyung^3,7 (AUTHOR) dkhwang@kist.re.kr, Lee, Young Tack^1,8 (AUTHOR) ytlee@inha.ac.kr

Publikováno v: Nano-Micro Letters. 12/29/2022, Vol. 15 Issue 1, p1-11. 11p.

Graphene Bridge Heterostructure Devices for Negative Differential Transconductance Circuit Applications

Autor: Minjong Lee, Tae Wook Kim, Chang Yong Park, Kimoon Lee, Takashi Taniguchi, Kenji Watanabe, Min-gu Kim, Do Kyung Hwang, Young Tack Lee

Publikováno v: Nano-Micro Letters, Vol 15, Iss 1, Pp 1-11 (2022)

Highlights Graphene (Gr)-bridge heterostructure, consisting of a laterally series-connected (cascade) ambipolar/Gr/n-type 2D van der Waals channel materials for ambipolar semiconductor-based high-end application devices was developed. Non-classical t

Externí odkaz: https://doaj.org/article/c41171f4639d400d99aafb30ec104914