Zobrazeno 1 - 10
of 509
pro vyhledávání: '"multi-quantum well"'
Autor:
Veeramuthu Vignesh, Yuanpeng Wu, Sung-Un Kim, Jeong-Kyun Oh, Chandran Bagavath, Dae-Young Um, Zetian Mi, Yong-Ho Ra
Publikováno v:
Journal of Information Display, Vol 25, Iss 1, Pp 13-59 (2024)
The field of III-nitride (InGaN) nanowire micro light-emitting diode (µ-LED) displays is rapidly expanding and holds great promise, thanks to their chemical stability and outstanding performance across the entire visible spectrum. Notably, III-nitri
Externí odkaz:
https://doaj.org/article/e3bb466aaff2478b95150f90ec637061
Autor:
Rajab Yahyazadeh, Zahra Hashempour
Publikováno v:
Journal of Optoelectronical Nanostructures, Vol 8, Iss 2, Pp 81-107 (2023)
Abstract: This study employs a numerical model to analyze the non-radiative Auger current in c-plane InGaN/GaN multiple-quantum-well laser diodes (MQWLD) under hydrostatic pressure and temperature. Finite difference methods (FDMs) were used to acquir
Externí odkaz:
https://doaj.org/article/e6c1695258d744ffb2b183644a6db579
Autor:
Monisha Ghosh, Shilpi Bhattacharya Deb, Aritra Acharyya, Arindam Biswas, Hiroshi Inokawa, Hiroaki Satoh, Amit Banerjee, Alexey Y. Seteikin, Ilia G. Samusev
Publikováno v:
Nanomaterials, Vol 14, Iss 10, p 873 (2024)
In our pursuit of high-power terahertz (THz) wave generation, we propose innovative edge-terminated single-drift region (SDR) multi-quantum well (MQW) impact avalanche transit time (IMPATT) structures based on the AlxGa1−xN/GaN/AlxGa1−xN material
Externí odkaz:
https://doaj.org/article/c7763978b33e4a4a9c9198e9a94f8d99
Autor:
Behnam Zeinalvand Farzin, S. Bahareh Seyedein Ardebili, Tae In Kang, Jong Su Kim, Phuc Dinh Nguyen, Sang Jun Lee
Publikováno v:
Photonics, Vol 11, Iss 3, p 277 (2024)
InAsPSb is an emerging material used as an efficient barrier in quantum well structures, and the resulting devices can be employed in the mid-infrared region of the electromagnetic spectrum. This study investigates the photoreflectance spectra of two
Externí odkaz:
https://doaj.org/article/f0980f6c68ea467d809161864079c83f
Autor:
Il Gyu Jang, Vignesh Murugadoss, Tae Hoon Park, Kyung Rock Son, Ho Jin Lee, WanQi Ren, Min Ji Yu, Tae Geun Kim
Publikováno v:
Nano-Micro Letters, Vol 14, Iss 1, Pp 1-15 (2022)
Abstract A novel device structure for thermally activated delayed fluorescence (TADF) top emission organic light-emitting diodes (TEOLEDs) that improves the viewing angle characteristics and reduces the efficiency roll-off is presented. Furthermore,
Externí odkaz:
https://doaj.org/article/4b6d1ca86af9442ab53449754dae6018
Autor:
Rajab yahyazadeh, zahra hashempour
Publikováno v:
Journal of Optoelectronical Nanostructures, Vol 6, Iss 2, Pp 1-22 (2021)
In this paper, a numerical model is used to analyze an optical absorption coefficient according to the electronic properties of InGaN/GaN multiple-quantum-well solar cells (MQWSC) under hydrostatic pressure. Finite difference techniques have been use
Externí odkaz:
https://doaj.org/article/64a100335393410b9065457539e8fbdc
Autor:
Rajab yahyazadeh, zahra hashempour
Publikováno v:
Journal of Optoelectronical Nanostructures, Vol 5, Iss 3, Pp 81-102 (2020)
The present study was conducted to investigate current density of0.3 0.7 Al Ga N/ GaN multiple quantum well solar cell (MQWSC) under hydrostaticpressure. The effects of hydrostatic pressure were taken into account to measureparameters of 0.3 0.7 Al G
Externí odkaz:
https://doaj.org/article/a0bbc35a368c41449fc242d3c517a6eb
Akademický článek
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Akademický článek
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Autor:
S. Bahareh Seyedein Ardebili, Jong Su Kim, Jaedu Ha, Tae In Kang, Behnam Zeinalvand Farzin, Yeongho Kim, Sang Jun Lee
Publikováno v:
Energies, Vol 16, Iss 3, p 1162 (2023)
We investigated the conduction- and valence-confined energy levels and first band-to-band transition energies of a type-II InAs/GaSb multi-quantum-well at 77 K and room temperature for various well and barrier thicknesses. We calculated the electron
Externí odkaz:
https://doaj.org/article/2005ed7ad85c436e9d413534e143b872