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Basic development steps towards low-temperature molecular beam epitaxy of InP-based AlInAs/GaInAs multiple quantum wells are presented. The achievement of unstrained material and the adjustment of 1.55 μm emission necessitate modified growth conditi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5da6f1579dabc030af9e01a76b05a61c
https://publica.fraunhofer.de/handle/publica/200520
https://publica.fraunhofer.de/handle/publica/200520
