Zobrazeno 1 - 10
of 48
pro vyhledávání: '"microwave photoconductivity decay"'
Autor:
Wei Cai, Honglong Ning, Shangxiong Zhou, Zhennan Zhu, Rihui Yao, Jianqiu Chen, Ruiqiang Tao, Zhiqiang Fang, Xubing Lu, Junbiao Peng
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1140-1144 (2019)
Solution-processed oxide dielectrics are widely studied as alternatives to SiO2, SiNx in thin film transistors for high capacitance and low energy consuming. However, it's still a challenge to achieve high quality of solution-processed oxide dielectr
Externí odkaz:
https://doaj.org/article/594b4840b3bb49cb85abc88fcd520b67
Autor:
Huansong Tang, Kuankuan Lu, Zhuohui Xu, Honglong Ning, Dengming Yao, Xiao Fu, Huiyun Yang, Dongxiang Luo, Rihui Yao, Junbiao Peng
Publikováno v:
Micromachines, Vol 12, Iss 9, p 1044 (2021)
The praseodymium-doped indium-zinc-oxide (PrIZO) thin film transistor (TFT) shows broad application prospects in the new generation of display technologies due to its high performance and high stability. However, traditional device performance evalua
Externí odkaz:
https://doaj.org/article/fe96ce0fb52748c9b859c84d5c60cfdb
Autor:
Shiben Hu, Kuankuan Lu, Honglong Ning, Rihui Yao, Yanfen Gong, Zhangxu Pan, Chan Guo, Jiantai Wang, Chao Pang, Zheng Gong, Junbiao Peng
Publikováno v:
Nanomaterials, Vol 11, Iss 2, p 522 (2021)
In this work, we performed a systematic study of the physical properties of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O2/(Ar+O2) flow ratios, and annealing temperatures. X-ray reflectivity (XR
Externí odkaz:
https://doaj.org/article/b57bfc71ec9949679ca89538c3c746f4
Autor:
Junbiao Peng, Ruiqiang Tao, Xubing Lu, Zhou Shangxiong, Wei Cai, Zhu Zhennan, Rihui Yao, Honglong Ning, Zhiqiang Fang, Chen Jianqiu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1140-1144 (2019)
Solution-processed oxide dielectrics are widely studied as alternatives to SiO2, SiNx in thin film transistors for high capacitance and low energy consuming. However, it's still a challenge to achieve high quality of solution-processed oxide dielectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ad278ad2cb12fee6e93b473253dbc58a
https://doi.org/10.1109/jeds.2019.2951203
https://doi.org/10.1109/jeds.2019.2951203
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Zhuohui Xu, Dongxiang Luo, Xiao Fu, Rihui Yao, Honglong Ning, Kuankuan Lu, Dengming Yao, Junbiao Peng, Huansong Tang, Huiyun Yang
Publikováno v:
Micromachines
Volume 12
Issue 9
Micromachines, Vol 12, Iss 1044, p 1044 (2021)
Volume 12
Issue 9
Micromachines, Vol 12, Iss 1044, p 1044 (2021)
The praseodymium-doped indium-zinc-oxide (PrIZO) thin film transistor (TFT) shows broad application prospects in the new generation of display technologies due to its high performance and high stability. However, traditional device performance evalua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd7db280fdaf7dba7dfc44684342b8e6
https://doi.org/10.3390/mi12091044
https://doi.org/10.3390/mi12091044
Publikováno v:
電気学会研究会資料. EDD, 電子デバイス研究会. 2017:7-11
We discussed applying the microwave photoconductivity decay (µ-PCD) to measure carrier lifetime of silicon epitaxial wafer. This paper clarified the range of evaluable substrate concentration and thickness by construction of conditional expression a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::049476b73cfefce70cd9b6c355fe3058
https://kyutech.repo.nii.ac.jp/records/5284
https://kyutech.repo.nii.ac.jp/records/5284
Autor:
Xuan Zeng, Junbiao Peng, Mingyu Zhang, Rihui Yao, Zhang Xiaochen, Honglong Ning, Chen Junlong, Zhuohui Xu, Kuankuan Lu, Zhao Yang
Publikováno v:
Coatings
Volume 11
Issue 5
Coatings, Vol 11, Iss 585, p 585 (2021)
Volume 11
Issue 5
Coatings, Vol 11, Iss 585, p 585 (2021)
The indium-free amorphous oxide semiconductor thin film transistor (AOS-TFT) with aluminum (Al) electrodes shows broad application prospects in new-generation display technologies, such as ultra-high definition large-screen display, OLED display and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5cf9e8f1776d42c4c41741cef33a0e73
https://doi.org/10.3390/coatings11050585
https://doi.org/10.3390/coatings11050585
Autor:
Pang Chao, Rihui Yao, Zhangxu Pan, Junbiao Peng, Honglong Ning, Kuankuan Lu, Hu Shiben, Wang Jiantai, Gong Yanfen, Guo Chan, Zheng Gong
Publikováno v:
Nanomaterials
Nanomaterials, Vol 11, Iss 522, p 522 (2021)
Volume 11
Issue 2
Nanomaterials, Vol 11, Iss 522, p 522 (2021)
Volume 11
Issue 2
In this work, we performed a systematic study of the physical properties of amorphous Indium–Gallium–Zinc Oxide (a-IGZO) films prepared under various deposition pressures, O2/(Ar+O2) flow ratios, and annealing temperatures. X-ray reflectivity (XR
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::95ab4ce04d3a3dfde8010020f8e52480
https://doi.org/10.3390/nano11020522
https://doi.org/10.3390/nano11020522