Zobrazeno 1 - 10
of 76
pro vyhledávání: '"metal quantum well"'
Autor:
Martin Hell, Niels Ehlen, Giovanni Marini, Yannic Falke, Boris V. Senkovskiy, Charlotte Herbig, Christian Teichert, Wouter Jolie, Thomas Michely, Jose Avila, Giovanni Di Santo, Diego M. de la Torre, Luca Petaccia, Gianni Profeta, Alexander Grüneis
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-11 (2020)
Cesium atoms that are grown on intercalated bilayer graphene can create an ordered epitaxial film. Here, the authors report that such a strained film can host quantum well states with high electronic quality as characterized through angle-resolved ph
Externí odkaz:
https://doaj.org/article/c514cf25f8504d95b62a2f1d31b3b72d
Akademický článek
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Autor:
Zhen Zhang1, Yanfeng Zhang2, Qiang Fu1, Hui Zhang1, Yunxi Yao1, Teng Ma1, Dali Tan1, Qikun Xue2, Xinhe Bao1 xhbao@dicp.ac.cn
Publikováno v:
Journal of Chemical Physics. 7/7/2008, Vol. 129 Issue 1, p014704. 6p. 4 Graphs.
Autor:
Thomas Michely, Luca Petaccia, Diego M. de la Torre, Giovanni Marini, Christian Teichert, Giovanni Di Santo, Charlotte Herbig, Yannic Falke, Gianni Profeta, Boris V. Senkovskiy, Niels Ehlen, Martin Hell, Wouter Jolie, Alexander Grüneis, José Avila
Publikováno v:
Nature Communications
Nature Communications, Vol 11, Iss 1, Pp 1-11 (2020)
Nature Communications, Vol 11, Iss 1, Pp 1-11 (2020)
We show that Cs intercalated bilayer graphene acts as a substrate for the growth of a strained Cs film hosting quantum well states with high electronic quality. The Cs film grows in an fcc phase with a substantially reduced lattice constant of 4.9
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Akademický článek
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Publikováno v:
Modern Physics Letters B. :1075-1096
Noble-metal multilayer systems have been grown and examined with angle-resolved photoemission. Surface states, and single and double quantum wells have been studied experimentally; the results can be explained with a simple theoretical model based up
Autor:
Tivarus, Cristian Alexandru
A number of possible near and long term semiconductor device technologies rely on abrupt metal-semiconductor interfaces with nm-dimensions, and with internal nm-scale inhomogeneity. It is therefore very important to be able probe the electronic prope
Externí odkaz:
http://rave.ohiolink.edu/etdc/view?acc_num=osu1134419471
Autor:
Tivarus, Cristian Alexandru
Publikováno v:
Connect to resource online.
Thesis (Ph. D.)--Ohio State University, 2005.
Title from first page of PDF file. Includes bibliographical references (p. 227-233).
Title from first page of PDF file. Includes bibliographical references (p. 227-233).
Externí odkaz:
http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1134419471
Autor:
Qiang Fu, Qi-Kun Xue, Yunxi Yao, Zhen Zhang, Xinhe Bao, Dali Tan, Yanfeng Zhang, Hui Zhang, Teng Ma
Publikováno v:
The Journal of Chemical Physics. 129:014704
Pb quantum well films with atomic-scale uniformity in thickness over macroscopic areas were prepared on Si(111)-7x7 surfaces. As a probe molecule, O(2) was used to explore the effect of electron confinement in the metal films on the surface reactivit