Integration of LaMnO3+δ films on platinized silicon substrates for resistive switching applications by PI-MOCVD

Autor: Raquel Rodriguez-Lamas, Dolors Pla, Odette Chaix-Pluchery, Benjamin Meunier, Fabrice Wilhelm, Andrei Rogalev, Laetitia Rapenne, Xavier Mescot, Quentin Rafhay, Hervé Roussel, Michel Boudard, Carmen Jiménez, Mónica Burriel

Publikováno v: Beilstein Journal of Nanotechnology, Vol 10, Iss 1, Pp 389-398 (2019)

The next generation of electronic devices requires faster operation velocity, higher storage capacity and reduction of the power consumption. In this context, resistive switching memory chips emerge as promising candidates for developing new non-vola

Externí odkaz: https://doaj.org/article/adbbf74429b747d1839f5596ecd3aaf6

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Optical and Structural Properties of MOCVD Grown InxGa1-xAs Epilayers

Autor: Ilkay Demir, Sezai Elagoz, Ebru Senadim Tuzemen, B. O. Alaydin

Publikováno v: Volume: 38, Issue: 4 681-689
Cumhuriyet Science Journal
Cumhuriyet Science Journal, Vol 38, Iss 4, Pp 681-689 (2017)

InxGa1-xAs layers on undoped InP (100) substrateswere grown with Aixtron 200-4RF/S horizontal Metal Organic Chemical Vapour Deposition (MOCVD)reactor. All the epilayers havebeen grown with different indium compositions. Thickness of the samples were

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3bf57a65c801e76997833dabcb774cf7
https://dergipark.org.tr/tr/pub/csj/issue/31777/349262

Admittance spectroscopy of GaAs/InGaP MQWstructures

Autor: Luciano Tarricone, Massimo Longo, E. Gombia, C. Ghezzi, Andrea Parisini

Publikováno v: Materials science & engineering. B, Solid-state materials for advanced technology 147 (2008): 171–174. doi:10.1016/j.mseb.2007.08.017
info:cnr-pdr/source/autori:Gombia E.; Ghezzi C.; Parisini A.; Tarricone L.; Longo M./titolo:Admittance spectroscopy of GaAs%2FInGaP MQWstructures/doi:10.1016%2Fj.mseb.2007.08.017/rivista:Materials science & engineering. B, Solid-state materials for advanced technology/anno:2008/pagina_da:171/pagina_a:174/intervallo_pagine:171–174/volume:147
E-MRS Spring Meeting 2007, Strasburgo, Francia., 2007
info:cnr-pdr/source/autori:E. Gombia1, C. Ghezzi2, A. Parisini2, L. Tarricone2, M. Longo3/congresso_nome:E-MRS Spring Meeting 2007/congresso_luogo:Strasburgo, Francia./congresso_data:2007/anno:2007/pagina_da:/pagina_a:/intervallo_pagine
info:cnr-pdr/source/autori:E. Gombia a; C. Ghezzi b; A. Parisini b; L. Tarricone b; M. Longo c/titolo:Admittance spectroscopy of GaAs%2FInGaP MQW structures/doi:10.1016%2Fj.mseb.2007.08.017/rivista:Materials science & engineering. B, Solid-state materials for advanced technology/anno:2008/pagina_da:171/pagina_a:174/intervallo_pagine:171–174/volume:147

An accurate determination of the valence band discontinuity of the lattice matched GaAs/InGaP heterostructure is performed by admittance spectroscopy measurements in p(+)/MQW/n(+) structures grown by metal-organic vapour phase epitaxy (MOVPE) using t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4bd2c6f944c157638737415d4fabca85
http://www.sciencedirect.com/science/article/pii/S0921510707004710