Zobrazeno 1 - 10
of 4 509
pro vyhledávání: '"low-k"'
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 15, Iss 1, Pp 713-718 (2024)
In this research paper, a vertical tunnel field-effect transistor (TFET) structure containing a live metal strip and a material with low dielectric constant is designed, and its performance metrics are analyzed in detail. Low-k SiO2 is incorporated i
Externí odkaz:
https://doaj.org/article/7f35bd15b6fa4ce19268b862a8ddd0c8
Autor:
Hema Dinesh Barnana, Syed A. M. Tofail, Krittish Roy, Charlie O’Mahony, Veronika Hidaši Turiničová, Maroš Gregor, Ehtsham ul Haq
Publikováno v:
Frontiers in Bioengineering and Biotechnology, Vol 12 (2024)
Biodielectrics is a subset of biological and/or bioinspired materials that has brought a huge transformation in the advancement of medical science, such as localized drug delivery in cancer therapeutics, health monitoring, bone and nerve repair, tiss
Externí odkaz:
https://doaj.org/article/dbaaecd4fa434cca877fb1825d1463f2
Autor:
Hima Bindu Valiveti, Indr Jeet Rajput, N. Udaya Kumar, Harsh Lohiya, R. Sri Uma Suseela, Atul Singla, Saurabh Rajvanshi
Publikováno v:
Cogent Engineering, Vol 11, Iss 1 (2024)
When developing a nano-chip, nano-electronics and its principles play a vital role in resultant circuit construction using numerous components. The channel spacing, length and height of the components is measured in nanometre (nm). These nm-sized cha
Externí odkaz:
https://doaj.org/article/e98e4e1ce6294f4790a7303cc1deee49
Autor:
Shabir Dar, S. Bhattacharyya, S. Chakraborty, S. Jehangir, Soumik Bhattacharya, G.H. Bhat, J.A. Sheikh, N. Rather, S.S. Nayak, Sneha Das, S. Basu, G. Mukherjee, S. Nandi, R. Banik, S. Basak, C. Bhattacharya, S. Chattopadhyay, S. Das Gupta, A. Karmakar, S.S. Ghugre, D. Kumar, D. Mondal, S. Mukhopadhyay, D. Pandit, S. Rajbanshi, R. Raut
Publikováno v:
Physics Letters B, Vol 851, Iss , Pp 138565- (2024)
A positive parity sequence of ΔI=2 γ transitions has been identified above Iπ=9/2+ state (Ex=2019 keV) in 115Sb through in-beam γ ray spectroscopic technique. Rotational features of this sequence are found similar to a low-K decoupled band. Obser
Externí odkaz:
https://doaj.org/article/580291ec121d4f8ca9e18ff99c26d3bf
Akademický článek
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Autor:
Mikhail R. Baklanov, Andrei A. Gismatulin, Sergej Naumov, Timofey V. Perevalov, Vladimir A. Gritsenko, Alexey S. Vishnevskiy, Tatyana V. Rakhimova, Konstantin A. Vorotilov
Publikováno v:
Polymers, Vol 16, Iss 15, p 2230 (2024)
Organosilicate glass (OSG) films are a critical component in modern electronic devices, with their electrical properties playing a crucial role in device performance. This comprehensive review systematically examines the influence of chemical composi
Externí odkaz:
https://doaj.org/article/e2f7c39f9c1f42738459a47bef731a5b
Publikováno v:
Macromolecular Materials and Engineering, Vol 308, Iss 9, Pp n/a-n/a (2023)
Abstract Low dielectric constant (k) polymers with excellent comprehensive properties are useful materials in the microelectronics industry as matrix resins or encapsulation layers. With the inherent low polarization, high reactivity, good processabi
Externí odkaz:
https://doaj.org/article/2f237bc24339430f9da935ccd1aa40a5
Autor:
Borja, Juan1, Plawsky, Joel L.1 plawsky@rpi.edu, Lu, T.-M.2, Bakhru, Hassaram3, Gill, William N.1
Publikováno v:
Journal of Applied Physics. 2014, Vol. 115 Issue 8, p1-6. 6p. 1 Black and White Photograph, 1 Chart, 4 Graphs.
Publikováno v:
Giant, Vol 14, Iss , Pp 100146- (2023)
Low-dielectric-constant (low-k) materials are an indispensable part of microprocessors as they can alleviate electronic crosstalk, charge build-up, and signal propagation delay. However, existing low-k materials usually have k values higher than 2 an
Externí odkaz:
https://doaj.org/article/cdd728ed72b94329b8b5b064e708646e
Akademický článek
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