Zobrazeno 1 - 10
of 1 299
pro vyhledávání: '"localized states"'
Publikováno v:
Nanophotonics, Vol 13, Iss 21, Pp 3925-3944 (2024)
Flat bands – single-particle energy bands – in tight-binding lattices, aka networks, have attracted attention due to the presence of macroscopic degeneracies and their sensitivity to perturbations. They support compact localized eigenstates prote
Externí odkaz:
https://doaj.org/article/b40aec551bbc44a2b900a77bf0e21262
Publikováno v:
Carbon Trends, Vol 16, Iss , Pp 100395- (2024)
A rectangular graphyne sheet is composed of units similar to phenyl rings that are linked by acetylenic chains, as in hexagonal γ-graphyne. This system is organized over a rectangular lattice similar to that of the recently synthesized biphenylene n
Externí odkaz:
https://doaj.org/article/853ca739b9f24553a381c71a7726569f
Publikováno v:
Nanophotonics, Vol 12, Iss 17, Pp 3409-3415 (2023)
Flat band systems are commonly associated with compact localized states (CLSs) that arise from the macroscopic degeneracy of eigenstates at the flat band energy. However, in the case of singular flat bands, conventional localized flat band states are
Externí odkaz:
https://doaj.org/article/2632a2088f0447e1a8ba908b4e98a1c5
Autor:
Lana F. Sahal, Abdullah Al-Numan
Publikováno v:
Baghdad Science Journal, Vol 20, Iss 2 (2023)
The optical absorption data of Hydrogenated Amorphous Silicon was analyzed using a Dunstan model of optical absorption in amorphous semiconductors. This model introduces disorder into the band-band absorption through a linear exponential distribution
Externí odkaz:
https://doaj.org/article/c4c54e210b184b119d48da50d5a35931
Publikováno v:
Frontiers in Physics, Vol 10 (2023)
We investigate the existence and stability of localized gap states at a non-linear interface of non-linear fractional systems in a one-dimensional photonic lattice. By using the direct numerical simulations and linear stability analysis, we obtain th
Externí odkaz:
https://doaj.org/article/13208a4c31124779bfc08fa5cf7f2781
Akademický článek
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Detection of optical emissions from deep localized states in a self-assembled InAs/GaAs QD structure
Publikováno v:
Applied Surface Science Advances, Vol 7, Iss , Pp 100199- (2022)
This work reports on the optical properties of self-assembled InAs/GaAs quantum dots (QDs) grown by molecular beam epitaxy. A sigmoidal temperature-dependent variation of the bandgap energy of the dots is detected from the photoluminescence (PL) inve
Externí odkaz:
https://doaj.org/article/59e259f6c7e646859f9a5ea06b696b6d
Autor:
Yangfeng Li, Yixiao Li, Jie Zhang, Yi Wang, Tong Li, Yang Jiang, Haiqiang Jia, Wenxin Wang, Rong Yang, Hong Chen
Publikováno v:
Crystals, Vol 12, Iss 12, p 1837 (2022)
Despite the large misfit dislocation densities, indium gallium nitride (InGaN) demonstrates high luminous efficiency both for electroluminescence and photoluminescence. The mechanism behind it has been interpreted as the existence of potential minima
Externí odkaz:
https://doaj.org/article/69979ce421d14c1aa5c035ff02e84236