Zobrazeno 1 - 10
of 439
pro vyhledávání: '"light hole"'
Autor:
Alexander M. Smirnov, Anastasia D. Golinskaya, Vladimir N. Mantsevich, Maria V. Kozlova, Kseniia V. Ezhova, Bedil M. Saidzhonov, Roman B. Vasiliev, Vladimir S. Dneprovskii
Publikováno v:
Results in Physics, Vol 32, Iss , Pp 105120- (2022)
The experimental investigations of the colloidal heterostructured CdSe/CdS nanoplatelets transient absorption in the regime of one-photon stationary excitation of excitons by high-intensity nanosecond laser pulses are presented. A strong dependence o
Externí odkaz:
https://doaj.org/article/5b33ba9f92604d29be8469c5649385f7
Autor:
Xiangjun Shang, Hanqing Liu, Xiangbin Su, Shulun Li, Huiming Hao, Deyan Dai, Zesheng Chen, Haiqiao Ni, Zhichuan Niu
Publikováno v:
Crystals, Vol 12, Iss 8, p 1116 (2022)
In this work, we measure polarization-resolved photoluminescence spectra from excitonic complexes in tens of single InAs/GaAs quantum dots (QDs) at the telecom O-band with strain-coupled bilayer structure. QDs often show fine-structure splitting (FSS
Externí odkaz:
https://doaj.org/article/1d2c5bff25904393ac8fa144e4b6556e
Autor:
Hind Althib
Publikováno v:
Crystals, Vol 12, Iss 8, p 1166 (2022)
Models describing the tunneling of electrons and holes through parabolic InxGa1−xN/GaN quantum well/LED structures with respect to strain were developed. The transmission coefficient, tunneling lifetime, and efficiency of LED structures were evalua
Externí odkaz:
https://doaj.org/article/5ac93303af9e4fcfa14b7f2a9ceb5c2e
Autor:
Xiangjun Shang, Shulun Li, Hanqing Liu, Xiangbin Su, Huiming Hao, Deyan Dai, Xiaoming Li, Yuanyuan Li, Yuanfei Gao, Xiuming Dou, Haiqiao Ni, Zhichuan Niu
Publikováno v:
Nanomaterials, Vol 12, Iss 7, p 1219 (2022)
In this work, we develop single-mode fiber devices of an InAs/GaAs quantum dot (QD) by bonding a fiber array with large smooth facet, small core, and small numerical aperture to QDs in a distributed Bragg reflector planar cavity with vertical light e
Externí odkaz:
https://doaj.org/article/e9dc848ea06d490fb4743f5a914103f8
Autor:
Tiwari, Sandip, author
Publikováno v:
Semiconductor Physics : Principles, Theory and Nanoscale, 2020, ill.
Externí odkaz:
https://doi.org/10.1093/oso/9780198759867.003.0017
Autor:
Jennifer Kipke, Gunnar von der Geest
Publikováno v:
ATZ worldwide. 123:48-51
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5159316d2b62213e9b50f7604133253d
https://doi.org/10.1007/s38311-021-0712-8
https://doi.org/10.1007/s38311-021-0712-8
Autor:
Vlastimil Růžička, Roman Mlejnek, Lucie Juřičková, Karel Tajovský, Petr Šmilauer, Petr Zajíček
Publikováno v:
Acta Carsologica, Vol 45, Iss 1 (2016)
The invertebrates of the Macocha Abyss, Moravian Karst, Czech Republic, were collected in 2007–2008 and 222 species were identified in total. The relative abundance of individual taxa of land snails, harvestmen, pseudoscorpions, spiders, millipedes
Externí odkaz:
https://doaj.org/article/3d86c72d2a1046cf90180d5e323e819c
Publikováno v:
Journal of Sensors, Vol 2019 (2019)
This paper describes the characterization of the light hole, also known as the lumen, in implanted stents affected by restenosis processes using bioimpedance (BI) as a biomarker. The presented approach will enable real-time monitoring of lumens in im
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6050807e004396f03f6c3aa6df2b55ea
https://doi.org/10.1155/2019/7167186
https://doi.org/10.1155/2019/7167186
Autor:
Xiangjun Shang, Shulun Li, Hanqing Liu, Xiangbin Su, Huiming Hao, Deyan Dai, Xiaoming Li, Yuanyuan Li, Yuanfei Gao, Xiuming Dou, Haiqiao Ni, Zhichuan Niu
Publikováno v:
Nanomaterials; Volume 12; Issue 7; Pages: 1219
In this work, we develop single-mode fiber devices of an InAs/GaAs quantum dot (QD) by bonding a fiber array with large smooth facet, small core, and small numerical aperture to QDs in a distributed Bragg reflector planar cavity with vertical light e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a60a32ecab19bfc9276cc583ea1c440e
https://pubmed.ncbi.nlm.nih.gov/35407336
https://pubmed.ncbi.nlm.nih.gov/35407336
Autor:
Elena Blundo, Peter C. M. Christianen, Andrés Granados del Águila, Antonio Polimeni, Chennupati Jagadish, Yanan Guo, Marta De Luca, Davide Tedeschi, Hark Hoe Tan, H. Aruni Fonseka
Publikováno v:
ACS Nano, 14, 11613-11622
ACS Nano, 14, 9, pp. 11613-11622
ACS Nano, 14, 9, pp. 11613-11622
The formation of wurtzite (WZ) phase in III–V nanowires (NWs) such as GaAs and InP is a complication hindering the growth of pure-phase NWs, but it can also be exploited to form NW homostructures consisting of alternate zincblende (ZB) and WZ segme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b09e48e92455ccf679d2c16fea1c49c
http://wrap.warwick.ac.uk/142401/1/WRAP-Hole-electron-effective-masses-single-InP-nanowires-Wurtzite-Zincblende-homojunction-Fonseka-2020.pdf
http://wrap.warwick.ac.uk/142401/1/WRAP-Hole-electron-effective-masses-single-InP-nanowires-Wurtzite-Zincblende-homojunction-Fonseka-2020.pdf
