Zobrazeno 1 - 1
of 1
pro vyhledávání: '"laterale Verteilung"'
Spectrally and spatially resolved low‐temperature photoluminescence topography has been applied to investigate the lateral variation of impurities in nominally undoped epitaxial GaAs layers. The concentrations of both shallow donors and acceptors e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cbfb7af58cf5c27075b96dc498a3c05
https://publica.fraunhofer.de/handle/publica/181814
https://publica.fraunhofer.de/handle/publica/181814
