Zobrazeno 1 - 8
of 8
pro vyhledávání: '"lågbrusförstärkare"'
Autor:
Hansson, Martin
In this thesis, three different types of low-noise amplifiers (LNA’s) have been designed using a 0.25 mm SiGe BiCMOS process. Firstly, a single-stage amplifier has been designed with 11 dB gain and 3.7 dB noise figure at 8 GHz. Secondly, a cascode
Externí odkaz:
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-1530
Autor:
Hansson, Martin
In this thesis, three different types of low-noise amplifiers (LNA’s) have been designed using a 0.25 mm SiGe BiCMOS process. Firstly, a single-stage amplifier has been designed with 11 dB gain and 3.7 dB noise figure at 8 GHz. Secondly, a cascode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______681::1c8345399ad22ef84a1444c79d4f4089
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-1530
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-1530
Autor:
Bendrot, Linnéa
Ohmic contacts are crucial components in semiconductor devices such as transistors and diodes, and lowering their contact resistance is an important factor in device performance enhancement. This is especially important for low-noise amplifiers (LNAs
Externí odkaz:
http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-316809
Autor:
Bendrot, Linnéa
Ohmic contacts are crucial components in semiconductor devices such as transistors and diodes, and lowering their contact resistance is an important factor in device performance enhancement. This is especially important for low-noise amplifiers (LNAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______260::da17a62cfe0b44fe0c6b91b1e279af55
http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-316809
http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-316809
Autor:
Christopher Mollen
Massive MIMO (multiple-input–multiple-output) is a multi-antenna technology for cellular wireless communication, where the base station uses a large number of individually controllable antennas to multiplex users spatially. This technology can prov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::326007a2c7f0c2734db1f9def856e7b9
https://doi.org/10.3384/diss-diva-143455
https://doi.org/10.3384/diss-diva-143455
Autor:
Mollén, Christopher
Massive MIMO (multiple-input–multiple-output) is a multi-antenna technology for cellular wireless communication, where the base station uses a large number of individually controllable antennas to multiplex users spatially. This technology can prov
Externí odkaz:
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-143455
Autor:
Alveteg, Sebastian
The thesis examines the prospects of using the superconductor NbN as the gatemetal for an InP HEMT. A HEMT or High Electron Mobility Transistor is aheterostructure transistor engineered to reach very high electron mobility. InPHEMTs are used as cryog
Externí odkaz:
http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-338079
Autor:
Törmänen, Markus
The increasing demand for high data rates in wireless communication systems is increasing the requirements on the transceiver front-ends, as they are pushed to utilize more and wider bands at higher frequencies. The work in this thesis is focused on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c1579c78c25292eaebd43be6438e0c19
https://lup.lub.lu.se/record/1585703
https://lup.lub.lu.se/record/1585703