Zobrazeno 1 - 10
of 96
pro vyhledávání: '"konar, Aniruddha"'
Analyzing {\it{ab-initio}} electronic and phonon band structure, temperature-dependent carrier transport in layered Ti$_{2}$AlC is investigated. It is found that cylindrical Fermi surface is the origin of the anisotropic carrier effective mass (infin
Externí odkaz:
http://arxiv.org/abs/1512.04512
Autor:
Konar, Aniruddha, Mathew, John, Nayak, Kaushik., Bajaj, Mohit., Pandey, Rajan K., Dhara, Sajal, Murali, K. V. R. M., Deshmukh, Mandar
Publikováno v:
Nano Letters, 15(3), 1684(2015)
Ability to understand and model the performance limits of nanowire transistors is the key to design of next generation devices. Here, we report studies on high-mobility junction-less gate-all-around nanowire field effect transistor with carrier mobil
Externí odkaz:
http://arxiv.org/abs/1506.07474
Publikováno v:
In AEUE - International Journal of Electronics and Communications February 2020 115
This article develops a consistent theory of free carrier screening of a two-dimensional electron gas in the silicon inversion layer in the presence of stacked layers of dielectric environment-commonly knows as gate stack in context of field-effect t
Externí odkaz:
http://arxiv.org/abs/1301.2040
Publikováno v:
In Materials Science in Semiconductor Processing April 2019 93:188-195
Autor:
Yan, Rusen, Bertolazzi, Simone, Brivio, Jacopo, Fang, Tian, Konar, Aniruddha, Birdwell, A. Glen, Nguyen, N. V., Kis, Andras, Jena, Debdeep, Xing, Huili Grace
Atomically thin two-dimensional molybdenum disulfide (MoS2) sheets have attracted much attention due to their potential for future electronic applications. They not only present the best planar electrostatic control in a device, but also lend themsel
Externí odkaz:
http://arxiv.org/abs/1211.4136
Autor:
Hwang, Wan Sik, Remskar, Maja, Yan, Rusen, Protasenko, Vladimir, Tahy, Kristof, Chae, Soo Doo, Zhao, Pei, Konar, Aniruddha, Huili, Xing, Seabaugh, Alan, Jena, Debdeep
We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs demonstrate ambipolar behavior and a high (~105x) on/off current ratio
Externí odkaz:
http://arxiv.org/abs/1204.0474
Monolayer of hexagonal boron nitride (h-BN), commonly known as "white graphene" is a promising wide bandgap semiconducting material for deep-ultaviolet optoelectronic devices. In this report, the light absorption of a single layer hexagonal boron nit
Externí odkaz:
http://arxiv.org/abs/1109.5145
Relaxing the assumption of "infinite and homogenous background" the dielectric response function of one-dimensional (1D) semiconducting nanowires embedded in a dielectric environment is calculated. It is shown that high-k (higher than semiconductor d
Externí odkaz:
http://arxiv.org/abs/1102.3110
Publikováno v:
Applied Physics Letters, 98, 022109 (2011)
A theory of charge transport in semiconductors in the presence of basal stacking faults is developed. It is shown that the presence of basal stacking faults leads to anisotropy in carrier transport. The theory is applied to carrier transport in non-p
Externí odkaz:
http://arxiv.org/abs/1011.0514