Zobrazeno 1 - 10
of 130
pro vyhledávání: '"kentaro Kinoshita"'
Autor:
Yuki Kubo, Masaharu Yonezawa, Hisashi Shima, Yasuhisa Naitoh, Hiroyuki Akinaga, Toshiki Nokami, Toshiyuki Itoh, Kentaro Kinoshita
Publikováno v:
IEEE Access, Vol 12, Pp 153809-153821 (2024)
Physical reservoir computing (PRC) is attracting considerable attention as a low-power, high-performance, edge artificial intelligence-friendly information technology. A physical reservoir device (PRD), which is key to PRC, converts input signals int
Externí odkaz:
https://doaj.org/article/a1eb129edce249e7b728e58b153e4ea9
Autor:
Yutaro Yamazaki, Kentaro Kinoshita
Publikováno v:
Advanced Science, Vol 11, Iss 3, Pp n/a-n/a (2024)
Abstract Recent years have witnessed a rising demand for edge computing, and there is a need for methods to decrease the computational cost while maintaining a high learning performance when processing information at arbitrary edges. Reservoir comput
Externí odkaz:
https://doaj.org/article/dd28cab17fba4e6b9728c54e94e09292
Efficient Collection of Oil Microdroplets by Hyperbranched, Space‐Filling Open Microfluidic Channels
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 36, Pp n/a-n/a (2023)
Abstract Open microfluidic channels, which capture and transport liquid on flat substrate surfaces through wettability contrast, offer a promising platform for the analysis, mixing, separation, etc. of small‐volume liquid samples. This study focuse
Externí odkaz:
https://doaj.org/article/70d6329c56044ae39d7a99973417c13e
Autor:
Yutaro Yamazaki, Kentaro Kinoshita
Publikováno v:
Applied Physics Express, Vol 17, Iss 2, p 027001 (2024)
Physical reservoir computing has been attracting attention in recent years. However, it remains unclear how much nonlinearity is required in the physical dynamics to achieve a high computational performance. Therefore, we focused on a resistor–capa
Externí odkaz:
https://doaj.org/article/6e47b2c541d74687b39c47ce8ae9a19b
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract A physical reservoir device with tunable transient dynamics is strongly required to process time-series data with various timescales generated in the edge region. In this study, we proposed using the dielectric relaxation at an electrode–i
Externí odkaz:
https://doaj.org/article/e49ac32322f54807b68396d3c7471ff6
Autor:
Masakazu Kobayashi, Yasumitsu Orii, Hisashi Shima, Yasuhisa Naitoh, Hiroyuki Akinaga, Dan Sato, Takuma Matsuo, Kentaro Kinoshita, Toshiki Nokami, Toshiyuki Itoh
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 893-897 (2022)
The temperature dependence of an intelligent connection (IConnect) device, in which an ionic liquid (IL) plays an essential role in a memristive function is presented in this study. An appropriate choice of IL and dissolved metal ion species can cont
Externí odkaz:
https://doaj.org/article/5c14a93847a94d9d97d6d4fb39508ff1
Autor:
Hiroshi Sato, Hisashi Shima, Yusei Honma, Yasuhisa Naitoh, Hiroyuki Akinaga, Toshiki Nokami, Toshiyuki Itoh, Kentaro Kinoshita
Publikováno v:
IEEE Access, Vol 9, Pp 71013-71021 (2021)
Ionic liquids (ILs), non-volatile liquids composed of cations and anions, have various attractive properties for electronic devices, such as wide potential windows. Combining ILs with electronic devices is presumed to be able to provide new options f
Externí odkaz:
https://doaj.org/article/a0d15620edc34fe19431477a4edb4d68
Autor:
Hiroshi Sato, Hisashi Shima, Toshiki Nokami, Toshiyuki Itoh, Yusei Honma, Yasuhisa Naitoh, Hiroyuki Akinaga, Kentaro Kinoshita
Publikováno v:
Frontiers in Nanotechnology, Vol 3 (2021)
We demonstrate a new memristive device (IL-Memristor), in which an ionic liquid (IL) serve as a material to control the volatility of the resistance. ILs are ultra-low vapor pressure liquids consisting of cations and anions at room temperature, and t
Externí odkaz:
https://doaj.org/article/c4a07279e2834319842adb1c2fa2ec9a
Publikováno v:
AIP Advances, Vol 9, Iss 3, Pp 035309-035309-4 (2019)
We theoretically investigated the dynamics of oxygen vacancies (Vo’s) and the effect of changing their charge states by performing first-principles molecular dynamics simulations at a temperature of 1000 K. Calculations were performed for two struc
Externí odkaz:
https://doaj.org/article/be6b8257bda04651af3e89a07247112b
Publikováno v:
AIP Advances, Vol 2, Iss 2, Pp 022141-022141-6 (2012)
Large variation in basic memory properties is a serious issue that hinders the practical use of ReRAMs. This study revealed that one of the main factors causing variation is the presence of multiple filaments in each memory cell. An operating filamen
Externí odkaz:
https://doaj.org/article/1869611fc8504ff08850df22700f4c48