Zobrazeno 1 - 10
of 32
pro vyhledávání: '"k.M. YIN"'
Autor:
R. Mitsuhashi, K.M. Yin, Philippe Absil, Serge Biesemans, C. Adelmann, P. Lehnen, Malgorzata Jurczak, Thomas Kauerauf, Shou-Zen Chang, Hui Yu, T. Y. Hoffmann, S. Van Elshocht, Jorge A. Kittl, Christa Vrancken, Masaaki Niwa, B.J. O′Sullivan, Marc Demand, B. Onsia, Stephan Brus, R. Singanamalla, Rita Vos, Anabela Veloso, G. Whittemore, Anne Lauwers
Publikováno v:
Solid-State Electronics. 52:1303-1311
This work reports that introducing lanthanide in the gate dielectric or in the gate electrode results, in both cases, in large effective work function (eWF) modulation towards n-type band-edge for Ni-FUSI devices. This is done by: (a) deposition of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49d1f2a230635b4bac01fcccc2b9631b
https://doi.org/10.1016/j.sse.2008.04.011
https://doi.org/10.1016/j.sse.2008.04.011
Autor:
T.S Duh, Akira Kohyama, C.W Chen, K.M Yin, Yutai Katoh, P.C Fang, Fu-Rong Chen, J.Y Yan, Ji-Jung Kai
Publikováno v:
Journal of Nuclear Materials. :518-523
The formation of helium bubbles in the advanced SiC composites, Tyranno-SA SiC/PyC/β-SiC (TSA) and Hi-Nicalon Type-S SiC/PyC/β-SiC (HNS), implanted with helium and irradiated by dual-beam was investigated. Post-implantation annealing was carried ou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5be0964d546e6a132f4eee98ae54ee40
https://doi.org/10.1016/j.jnucmat.2004.04.218
https://doi.org/10.1016/j.jnucmat.2004.04.218
Publikováno v:
Journal of Nuclear Materials. :513-517
In order to clarify the fracture mechanism of frictional stress and bonding strength in SiC/SiC composites, the mechanical test and HRTEM equipped with electron energy loss spectrometer were used. Due to the high sensitivity of carbon k-edge in the E
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3897da7d338cb92fd48053ba891da939
https://doi.org/10.1016/j.jnucmat.2004.04.342
https://doi.org/10.1016/j.jnucmat.2004.04.342
Autor:
A. Lauwers, Philippe Absil, K.M. Yin, B. Onsia, Stephan Brus, Hui Yu, Thomas Kauerauf, S. Biesemans, P. Lehnen, C. Adelmann, A. Veloso, S.Z. Chang
Publikováno v:
IEEE Electron Device Letters. 28:957-959
This letter reports a novel approach to achieve low threshold voltage (Vt) Ni-fully-silicide (FUSI) nMOSFETs with SiON dielectrics. By using a dysprosium-oxide (Dy2O3) cap layer with a thickness of 5 Aring on top of the SiON host dielectrics, Vt,lin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::688ebd71b3bf99af30c57e3b5791aa62
https://doi.org/10.1109/led.2007.906464
https://doi.org/10.1109/led.2007.906464
Autor:
S. De Gendt, V.S. Chang, Stefan Kubicek, Tom Schram, K.M. Yin, L.-A. Ragnarsson, Serge Biesemans, R. Mitsuhashi, C. Adelmann, Hui Yu, K. De Meyer, P. Lehnen, Philippe Absil, S. Van Elshocht, R. Singanamalla, H.-J. Cho, S.Z. Chang
Publikováno v:
IEEE Electron Device Letters. 28:656-658
In this letter, we report that by using a thin dysprosium oxide (Dy2O3)cap layer (~1-nm thick) on top of SiON host dielectrics, the threshold voltage (Vt) of poly-Si/TaN gated n-FETs can be modulated to match that of the reference poly-Si/SiON device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca2b7f4c7c86ff42c24e32ab044a6f31
https://doi.org/10.1109/led.2007.900308
https://doi.org/10.1109/led.2007.900308
Autor:
David Su, C.J. Chen, C.M. Huang, K.M. Yin, F.Y. Tseng, Y.M. Chen, Jeng-Han Lee, Y. S. Huan, Y. T. Lin
Publikováno v:
International Symposium for Testing and Failure Analysis.
An anodic etching is used for silicon junction profile delineation. Experimental results show that the etching rate is determined by dopant type, of which P type silicon etching rate will be enhanced while the N type silicon become inactive when an e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f63a8f6a15dbfe5ce78489489421edb5
https://doi.org/10.31399/asm.cp.istfa2013p0498
https://doi.org/10.31399/asm.cp.istfa2013p0498
Autor:
Stefan Kubicek, R. Singanamalla, S. DeGendt, Hui Yu, T. Y. Hoffmann, Philippe Absil, R. Mitsuhashi, Serge Biesemans, Anabela Veloso, Stephan Brus, S. Van Elshocht, Jorge A. Kittl, Christa Vrancken, Shou-Zen Chang, Rita Vos, Thomas Kauerauf, B. Onsia, X. Shi, Malgorzata Jurczak, Marc Demand, M. Niwa, Anne Lauwers, K.M. Yin, P. Lehnen, Christoph Adelmann
Publikováno v:
2007 IEEE Symposium on VLSI Technology.
This paper reports a novel approach to implement low Vt Ni-FUSI bulk CMOS by using a dysprosium oxide (DyO) cap layer on both HfSiON and SiON host dielectrics. We show for the first time that an ultra-thin DyO cap layer (5 Aring) can lower the NiSi F
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4e6eee5af9a947565616c86d1eefc17
https://doi.org/10.1109/vlsit.2007.4339710
https://doi.org/10.1109/vlsit.2007.4339710
Autor:
R. Mitsuhashi, G. Whittemore, S. Van Elshocht, Serge Biesemans, Malgorzata Jurczak, P. Lehnen, A. Lauwers, Rita Vos, T. Kauerauf, Barry O'Sullivan, M. Demand, K.M. Yin, Christoph Adelmann, S. Brus, Philippe Absil, Jorge A. Kittl, C. Vrancken, Masaaki Niwa, Bart Onsia, Anabela Veloso, T. Y. Hoffmann, S.Z. Chang, H.Y. Yu, R. Singanamalla
Publikováno v:
ESSDERC 2007 - 37th European Solid State Device Research Conference.
This work reports that introducing lanthanide in the gate dielectric or in the gate electrode results, in both cases, in large effective work function (WF) modulation towards n-type band-edge for Ni-FUSI devices. This is done by: a) deposition of a D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f097db1b9b2dbece3826e2864b6ca0fa
https://doi.org/10.1109/essderc.2007.4430912
https://doi.org/10.1109/essderc.2007.4430912
Autor:
Y.T. Hou, J.C. Jiang, V.S. Chang, S.M. Chang, J.M. Chiou, J.J. Lee, F.Y. Yen, R.L. Hwang, H.J. Tao, C.L. Hung, L.G. Yao, Tso-Ping Ma, K.M. Yin, H.J. Lin, R.F. Hsu, S.C. Chen, Y. Jin, M.S. Liang, Ra. Lim
Publikováno v:
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..
This paper reports the fabrication of MOSFETs with dual metal gate electrodes. Low threshold voltage (Vt) was achieved using TaC for nFETs and MoNx for pFETs. The transistors show excellent Ion-Ioff performance with well-controlled short channel effe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7341f2fa29a7eebc88527ad96f6d9ad9
https://doi.org/10.1109/vlsit.2006.1705192
https://doi.org/10.1109/vlsit.2006.1705192