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pro vyhledávání: '"inversion domain boundarie"'
Inversion domain boundaries are extended defects affecting cubic silicon carbide (3C-SiC) layers grown on the on-axis (001) Si wafers. Their impact on the device performance is still debated and a clear connection to their electronic properties at th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22cd41a1bbc5c85927b89b85bdb68d67
http://hdl.handle.net/10281/386950
http://hdl.handle.net/10281/386950
