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Autor:
DERROUICHE Soufiane
Publikováno v:
Journal of Electrical and Electronics Engineering, Vol 13, Iss 2, Pp 51-56 (2020)
In this paper, I present the effect of improving the electronic transport properties in the substrate on the performances of the considered High Electron Mobility Transistor HEMT. The decrease of substrate structural energies leads to improving the e
Externí odkaz:
https://doaj.org/article/b1650109d6384ea79d8d30c29b4f9eb2
Autor:
Soufiane Derrouiche
Publikováno v:
Soufiane Derrouiche
Journal of Electrical and Electronics Engineering, Vol 13, Iss 2, Pp 51-56 (2020)
Journal of Electrical and Electronics Engineering, Vol 13, Iss 2, Pp 51-56 (2020)
In this paper, I present the effect of improving the electronic transport properties in the substrate on the performances of the considered High Electron Mobility Transistor HEMT. The decrease of substrate structural energies leads to improving the e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::e38e4dac76f4ef28f11737722ceebd05
https://www.proquest.com/openview/2eaf8c37e791361e3d3899f8f9c6d45d/1?pq-origsite=gscholar&cbl=54417
https://www.proquest.com/openview/2eaf8c37e791361e3d3899f8f9c6d45d/1?pq-origsite=gscholar&cbl=54417
