Zobrazeno 1 - 10
of 167
pro vyhledávání: '"in-memory computation"'
Publikováno v:
Applied Mathematics and Nonlinear Sciences, Vol 8, Iss 2, Pp 789-798 (2023)
The manufacturing industry requires a unique recommendation system to suggest products and raw materials, but its performance is often poor in massive data environment. In order to solve the similarity connection problem of large-scale real-time data
Externí odkaz:
https://doaj.org/article/30dbe8bd3c8c4ea9ab68c1637cff4267
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 5, Iss , Pp 100080- (2023)
Memristor-based crossbar architecture emerges as a promising candidate for 3-D memory and neuromorphic computing. However, the sneak current through the unselected cells becomes a fundamental roadblock to their development, resulting in misreading an
Externí odkaz:
https://doaj.org/article/05709b23b6114e0f8bc69bc610fcda7a
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 9, Iss 2, Pp 124-133 (2023)
Devices based on the spin as the fundamental computing unit provide a promising beyond-complementary metal–oxide–semiconductor (CMOS) device option, thanks to their energy efficiency and compatibility with CMOS. One such option is a magnetoelectr
Externí odkaz:
https://doaj.org/article/26ac3389850247cc85b9180c345134ba
Publikováno v:
IEEE Access, Vol 11, Pp 98751-98763 (2023)
In recent years the technological limits inherently present in the classical Turing paradigm of computation have sparked the development of innovative solutions based on quantum devices or analog-digital mixed approaches often based on the time evolu
Externí odkaz:
https://doaj.org/article/df0cfb2ecb514fe3aeac6f84274e47da
Publikováno v:
IEEE Access, Vol 11, Pp 5609-5616 (2023)
We present here a simple three P-type MOSFET-based grounded memristor emulator model. The model is designed to achieve zero static power dissipation and is done so by eliminating the external DC supply i.e., no DC bias. The proposed memristor emulato
Externí odkaz:
https://doaj.org/article/cf82139f5dca4fe1b3655dbf3d7e3242
Autor:
Seong Min Kim, Kyeong Min Kim, Ji Hoon Choi, Seung Man Kang, Min Kyung Bang, So Hee Park, Eon Gyeong Lee, Seong Bae Park, Choong Seon Hong, Sang Hoon Hong
Publikováno v:
IEEE Access, Vol 11, Pp 3416-3430 (2023)
In this paper, we present a digital processing in memory (DPIM) configured as a stride edge-detection search frequency neural network (SE-SFNN) which is trained through spike location dependent plasticity (SLDP), a learning mechanism reminiscent of s
Externí odkaz:
https://doaj.org/article/cf14eab95f9342d2989981a21e3a7d63
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 14, Iss 1, p 3 (2024)
Hybrid magnetic tunnel junction/complementary metal oxide semiconductor (MTJ/CMOS) circuits based on in-memory-computation (IMC) architecture is considered as the next-generation candidate for the digital integrated circuits. However, the energy cons
Externí odkaz:
https://doaj.org/article/7c6dca5de11d4e56bba4b1da72580aa1
Publikováno v:
IEEE Access, Vol 10, Pp 125112-125135 (2022)
Training a CNN involves computationally intense optimization algorithms to fit the network using a training dataset, to update the network weight for inferencing and then pattern classification. Hence, the application of in-memory computation would e
Externí odkaz:
https://doaj.org/article/2c64a3480c9f43449ae141fb206807d9
Publikováno v:
IEEE Access, Vol 10, Pp 93256-93272 (2022)
Processing-in-Memory (PIM) has been actively studied to overcome the memory bottleneck by placing computing units near or in memory, especially for efficiently processing low locality data-intensive applications. We can categorize the in-DRAM PIMs de
Externí odkaz:
https://doaj.org/article/b16ad0a5f7924796ab062994bb468ca5
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