Mechanism of Tin-Induced Crystallization in Amorphous Silicon

Autor: A. O. Goushcha, V. Melnyk, Viktor Dan’ko, P.E. Shepeliavyi, A. G. Kuzmich, V. B. Neimash, Volodymyr O. Yukhymchuk

Publikováno v: Scopus-Elsevier
Ukrainian Journal of Physics; Vol. 59 No. 12 (2014); 1168
Український фізичний журнал; Том 59 № 12 (2014); 1168

Formation of Si nanocrystals in amorphous Si-metallic Sn film structures has been studied experimentally, by using the Auger spectroscopy, electron microscopy, and Raman scattering methods. The results are analyzed in comparison with recent results o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5b9bcc5817ac270d27e25c5eccc795cd
https://doi.org/10.15407/ujpe59.12.1168