Zobrazeno 1 - 1
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pro vyhledávání: '"hydrogen (H-2) plasma"'
Autor:
Xu, Menglei, Wang, Chong, Bearda, Twan, Simoen, Eddy, Radhakrishnan, Hariharsudan Sivaramakrishnan, Gordon, Ivan, Li, Wei, Szlufcik, Jozef, Poortmans, Jef
© 2018 IEEE. A fully dry and hydrofluoric-free low-temperature process has been developed to passivate n-type crystalline silicon (c-Si) surfaces. Particularly, the use of a hydrogen (H2) plasma treatment followed by in situ intrinsic hydrogenated a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1131::a126f31d8e319926d67966278040a15a
https://lirias.kuleuven.be/handle/123456789/630645
https://lirias.kuleuven.be/handle/123456789/630645
