Zobrazeno 1 - 10
of 44
pro vyhledávání: '"hosseini, Manouchehr"'
The electronic properties of a field-effect transistor with two different structures of MoSi$_2$N$_4$ and WSi$_2$N$_4$ monolayers as the channel material in the presence of biaxial strain are investigated. The band structures show that these compound
Externí odkaz:
http://arxiv.org/abs/2112.04171
The effects of substrate on the electronic properties of Graphene remains unclear. Many theoretical and experimental efforts have been done to clarify this discrepancy. In this work, we studied the electronic transport in armchair Graphene nanoribbon
Externí odkaz:
http://arxiv.org/abs/1910.06071
In this paper, electrical and electronic properties of strained mono-layer InTe for two structures, $\alpha$, and $\beta$ phases, is investigated. The band structure is obtained using density functional theory (DFT). The minimum energy and effective
Externí odkaz:
http://arxiv.org/abs/1905.04879
Publikováno v:
In Heliyon December 2022 8(12)
Publikováno v:
In Materials Science in Semiconductor Processing December 2022 152
Publikováno v:
In Current Applied Physics November 2021 31:132-140
In this paper the effect of biaxial and uniaxial strain on the mobility of single-layer MoS$_{2}$ for temperatures T $>$ 100 K is investigated. Scattering from intrinsic phonon modes, remote phonon and charged impurities are considered along with sta
Externí odkaz:
http://arxiv.org/abs/1503.01301
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures April 2020 118
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures February 2020 116
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