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pro vyhledávání: '"high-temperature encapsulation materials"'
Autor:
Lu, Shengchang
Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) are favored for their smaller specific on-resistance, lower switching losses, and higher theoretical temperature limits as compared to traditional silicon (Si) power switches. They have
Externí odkaz:
http://hdl.handle.net/10919/110953
