Zobrazeno 1 - 10
of 2 944
pro vyhledávání: '"high electron mobility transistors"'
Autor:
Henry Collins, Emre Akso, Christopher J. Clymore, Kamruzzaman Khan, Robert Hamwey, Nirupam Hatui, Matthew Guidry, Stacia Keller, Umesh K. Mishra
Publikováno v:
Electronics Letters, Vol 60, Iss 13, Pp n/a-n/a (2024)
Abstract The authors report a novel structure to improve the high‐frequency performance of nitrogen‐polar GaN deep‐recess high electron mobility transistors (HEMTs) wherein a timed plasma etch was used to tailor the profile of the gate dielectr
Externí odkaz:
https://doaj.org/article/4ef82fba092b4ef8a972ae30dc12bb56
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 981-987 (2024)
This paper presents a high gain voltage amplifier based on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with monolithically integrated enhancement-mode (E-mode) and depletion-mode (D-mode) devices. The GaN am
Externí odkaz:
https://doaj.org/article/17abb1965a0c475385146485e3e2e23c
Publikováno v:
Electronics Letters, Vol 60, Iss 10, Pp n/a-n/a (2024)
Abstract In this letter, molybdenum nitride (MoN) gate AlGaN/GaN HEMT has been investigated with MoN developed in various physical vapour deposition (PVD) conditions. The Schottky gate is studied through forward and reverse characteristics with diffe
Externí odkaz:
https://doaj.org/article/e57fedb0321e47cc8c49f9284a30f27e
Publikováno v:
Journal of Thermal Analysis & Calorimetry. Aug2017, Vol. 129 Issue 2, p1159-1168. 10p.
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Autor:
Suriya Shaffi Bhat, Insha Ishteyaq
Publikováno v:
Eurasian Journal of Science and Engineering, Vol 9, Iss 2, Pp 12-24 (2023)
In last five decades, the exponential demand in the field of electronic applications is powered by a drastic escalation in the compactness of silicon based complementary metal oxide semiconductor (CMOS) field effect transistor (FETs) and qugumentatio
Externí odkaz:
https://doaj.org/article/c1468a513d184e88ab2a12391c9c9257
Publikováno v:
Aerospace, Vol 11, Iss 5, p 346 (2024)
In this paper, simulation modeling was carried out using Sentaurus Technology Computer-Aided Design. Two types of high electron mobility transistors (HEMT), an AlGaN/GaN/AlGaN double heterojunction and AlGaN/GaN single heterojunction, were designed a
Externí odkaz:
https://doaj.org/article/4dd2ca5897e84bd897cfe06cfc554a03
Publikováno v:
Chip, Vol 2, Iss 3, Pp 100052- (2023)
In the past few decades, circuits based on gallium nitride high electron mobility transistor (GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and high-frequency applications, such as the new generation mobile communica
Externí odkaz:
https://doaj.org/article/9718f7af76d145108070b232a27f92d2
Autor:
Soumak Nandi, Shashank Kumar Dubey, Mukesh Kumar, Amit Krishna Dwivedi, Manisha Guduri, Aminul Islam
Publikováno v:
IEEE Access, Vol 11, Pp 133115-133130 (2023)
This work proposes a 100 nm metamorphic InP HEMT with an InAs channel inset for cryogenic environment millimetre wave applications. The usage of an ultra-thin 2 nm barrier layer, unique composite channel topology and III-V material selection provides
Externí odkaz:
https://doaj.org/article/8b8a83d9c2cd44b994077c441fa70286
Publikováno v:
IEEE Open Journal of the Industrial Electronics Society, Vol 4, Pp 123-134 (2023)
In this article, 650-V/7.5-A-rated enhancement-mode gallium nitride (GaN) high-electron-mobility transistors (HEMTs) with integrated gate drivers are characterized under thousands of accelerated thermal cycling (ATC) at different junction temperature
Externí odkaz:
https://doaj.org/article/f4144d1d5c084c93829664e30dac7427