Zobrazeno 1 - 1
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pro vyhledávání: '"high Almole fraction n-AlGaN"'
Autor:
Cho, H.K., Kang, J.H., Sulmoni, L., Kunkel, K., Rass, J., Susilo, N., Wernicke, T., Einfeldt, S., Kneissl, M.
The impact of plasma etching on the formation of low-resistance n-contacts on the AlGaN:Si current spreading layer during the chip fabrication of ultraviolet light-emitting diodes (UV LEDs) emitting at 265 nm is investigated. A two-step plasma etchin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f121c78c820e19a66b4e7c5713b8ec4
https://depositonce.tu-berlin.de/handle/11303/16377
https://depositonce.tu-berlin.de/handle/11303/16377
