Výsledky vyhledávání - "heteroepitaxy"

Akademický článek

Silicon‐Based 850 nm GaAs/GaAsP‐Strained Quantum Well Lasers with Active Region Dislocation Blocking Layers

Autor: Jian Li, Chen Jiang, Hao Liu, Yang Zhang, Hao Zhai, Xin Wei, Qi Wang, Gang Wu, Chuanchuan Li, Xiaomin Ren

Publikováno v: Advanced Photonics Research, Vol 5, Iss 7, Pp n/a-n/a (2024)

A silicon‐based room temperature (RT) continuous wave (CW) operation quantum well (QW) laser emitting at 850 nm is reported in this article. By applying the dislocation filter superlattice, the threading dislocation density of the GaAs pseudosubstr

Externí odkaz: https://doaj.org/article/ac4d4a89d57548d1bdc63b6cefe4512e

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Akademický článek

Investigation of the Dislocation Behavior of 6- and 8-Inch AlGaN/GaN HEMT Structures with a Thin AlGaN Buffer Layer Grown on Si Substrates

Autor: Yujie Yan, Jun Huang, Lei Pan, Biao Meng, Qiangmin Wei, Bing Yang

Publikováno v: Inorganics, Vol 12, Iss 8, p 207 (2024)

Developing cost-effective methods to synthesize large-size GaN films remains a challenge owing to the high dislocation density during heteroepitaxy. Herein, AlGaN/GaN HEMTs were grown on 6- and 8-inch Si(111) substrates using metal–organic chemical

Externí odkaz: https://doaj.org/article/e125d273ffd04c34aebbc764d17b98f3

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Akademický článek

CVD diamond: a review on options and reality

Autor: Christoph E. Nebel

Publikováno v: Functional Diamond, Vol 3, Iss 1 (2023)

In the future, electronic parts will penetrate everything, generating a new and fast-growing pollution problem. Future devices therefore need to be environmentally friendly with strong recycling options. A paradigm change in semiconductor technology

Externí odkaz: https://doaj.org/article/dbafadcf70914cd9b2147f27961cbb33

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Akademický článek

Heteroepitaxy of diamond semiconductor on iridium: a review

Autor: Weihua Wang, Benjian Liu, Leining Zhang, Jiecai Han, Kang Liu, Bing Dai, Jiaqi Zhu

Publikováno v: Functional Diamond, Vol 2, Iss 1, Pp 215-235 (2022)

As one of the representatives of carbon-based semiconductors, diamond is called the “Mount Everest” of electronic materials. To maximize its properties and realize its industrial applications, the fabrication of wafer-scale high-quality diamonds

Externí odkaz: https://doaj.org/article/04b2207e42e64549a5fa6cccbdc17853

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Akademický článek

The growth of InAlN/Si heterostructures with a high content of In

Autor: V.A. Lapin, I.V. Kasyanov

Publikováno v: Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов, Iss 14, Pp 168-175 (2022)

InAlN films on Si (111) were obtained by the ion-beam deposition with various technological growth parameters. The results of the study of grown films by the scanning electron microscopy were used to identify the conditions for obtaining InAlN contin

Externí odkaz: https://doaj.org/article/24cc54f546a5446d84c15e67f00c69a3

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Akademický článek

Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy: a review

Autor: Liu Zhetong, Liu Bingyao, Chen Zhaolong, Yang Shenyuan, Liu Zhiqiang, Wei Tongbo, Gao Peng, Liu Zhongfan

Publikováno v: National Science Open, Vol 2 (2023)

Heteroepitaxy can reduce the cost and widen the application range of semiconductor film synthesis and device fabrication. However, the lattice and thermal expansion coefficient mismatches between epilayers and substrates limit the improvement of crys

Externí odkaz: https://doaj.org/article/8a7eca1c0f814603b67c0aa90e3dee0f

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