Tamm resonances control in one-dimensional microwave photonic crystal for measuring parameters of heavily doped semiconductor layers

Autor: Skripal, Alexander Vladimirovich, Ponomarev, Denis Viktorovich, Komarov, Andrey Aleksandrovich, Sharonov, Vasily Evgenievich

Publikováno v: Известия Саратовского университета. Новая серия Серия: Физика, Vol 22, Iss 2, Pp 123-130 (2022)

The possibility has been explored to control the photonic Tamm resonances (TRs) in the one-dimensional microwave photonic crystal (MPC) with the dielectric filling by changing the thickness of the MPC’s outer layer adjacent to the heavily doped lay

Externí odkaz: https://doaj.org/article/75ff327d5cc04cbcaa518a76741a47dc

Quantum plasmonics and hyperbolic material for biosensing

Autor: Aubergier, Nathan, Loren, Patricia, Guise, Julien, Braho, Franziska, Fehlen, Pierre, Najem, Melissa, Gonzalez-Posada, Fernando, Blin, Stéphane, Cerutti, Laurent, Smaali, Rafik, Centeno, Emmanuel, Taliercio, Thierry

Publikováno v: Quantum Sensing and Nano Electronics and Photonics XVIII
Quantum Sensing and Nano Electronics and Photonics XVIII, Jan 2022, San Francisco, France. pp.59, ⟨10.1117/12.2615652⟩

International audience; In this work, we demonstrate that it is possible to use III-V semiconductors for plasmonics from the THz up to the midinfrared spectral range. We have fabricated hyperbolic nano-antenna based on heavily doped semiconductors de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::915f3acdcc7871a8d8bed457b307c8d8
https://doi.org/10.1117/12.2615652

Semiconductor plasmonics and metamaterials for IR applications

Autor: Patrícia Loren, Pierre Fehlen, Julien Guise, Franziska Barho, Melissa Najem, Fernando Gonzalez-Posada, Stéphane Blin, Laurent Cerutti, Rafik Smaali, Emmanuel Centeno, Thierry Taliercio

Publikováno v: SPIE Proceedings
SPIE Proceedings, 12002, SPIE, pp.1, 2022, ⟨10.1117/12.2612190⟩

In this paper, III-IV semiconductors are demonstrated as strong candidates for plasmonics applications in the Mid-IR. The perfect absorbers (PA) fabricated with heavily doped semiconductors features strong coupling between Fabry-Perot and localized s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd538e110940628bd0bc9ef258ad2660
https://hal.science/hal-03914858/file/Taliercio_Oxide_Symposium_22_01_05.pdf

High figures of merit in degenerate semiconductors. Energy filtering by grain boundaries in heavily doped polycrystalline silicon

Autor: Dario Narducci, Gianfranco Cerofolini, Ekaterina Selezneva, Stefano Frabboni, Giampiero Ottaviani

Publikováno v: AIP Conference Proceedings.

Heavily boron-doped polycrystalline silicon has been reported to be characterized by somewhat unexpectedly high power factor. High Seebeck coefficients are however unexpected in materials with high carrier densities. A semiquantitative model was prop

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ffb0df9b227d33a3fafd2ef187b3fb91
https://doi.org/10.1063/1.4731559

Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.