Zobrazeno 1 - 2
of 2
pro vyhledávání: '"hard switched GaN inverter"'
Publikováno v:
The Journal of Engineering (2019)
GaN device is a potential alternative to SiC as a wide band gap device. At present, there are almost no high-voltage GaN devices above 650 V, which makes an inverter design difficult for three-phase input using the standard two-level (2L) inverters.
Externí odkaz:
https://doaj.org/article/01e45f12e6614647ade1e6fcaaeaa32c
Publikováno v:
The Journal of Engineering (2019)
GaN device is a potential alternative to SiC as a wide band gap device. At present, there are almost no high-voltage GaN devices above 650 V, which makes an inverter design difficult for three-phase input using the standard two-level (2L) inverters.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::360402a4c2c5c40e10d822536804c1ce
https://doi.org/10.1049/joe.2018.8096
https://doi.org/10.1049/joe.2018.8096