Zobrazeno 1 - 1
of 1
pro vyhledávání: '"half-bridge multilevel modular converter(mmc)"'
Publikováno v:
电力工程技术, Vol 43, Iss 3, Pp 32-41 (2024)
Under inverter operating conditions, significant loss is incurred by the insulated gate bipolar transistor (IGBT) (referred to as T2 tube) in the lower part of the half-bridge submodule. The reduction of loss is beneficial for the improvement of equi
Externí odkaz:
https://doaj.org/article/d6a93384f6e64349b2f590e316a0c225