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pro vyhledávání: '"graphene field effect transistors"'
Akademický článek
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Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 7, Pp n/a-n/a (2023)
Abstract The deposition of high‐quality dielectric films on graphene surfaces is crucial in fabricating high‐performance graphene‐based electronics. In this study, the first application of UV‐assisted atomic layer deposition (UV‐ALD) to gra
Externí odkaz:
https://doaj.org/article/f3f3d1b4f41844da95f2fa9a4707e057
Drift suppression of solution-gated graphene field-effect transistors through electrolyte submersion
Autor:
Shota Ushiba, Yuka Tokuda, Tomomi Nakano, Takao Ono, Shinsuke Tani, Masahiko Kimura, Kazuhiko Matsumoto
Publikováno v:
Applied Physics Express, Vol 17, Iss 4, p 045002 (2024)
In solution-gated graphene FETs (SG-GFETs), cations in electrolyte solutions can intercalate between graphene and SiO _2 . Such permeation affects substrate-induced hole doping effects, resulting in drifts in the charge neutrality point (CNP) of SG-G
Externí odkaz:
https://doaj.org/article/30b42ea8814147fe8377c2061279569f
Publikováno v:
Applied Sciences, Vol 13, Iss 12, p 7201 (2023)
In this study, a process is developed for the fabrication of buried top-gated graphene transistors with Al2O3 as a gate dielectric, yielding devices that can be suitable for not only flexible electronics but also laser-induced graphene (LIG)-based te
Externí odkaz:
https://doaj.org/article/39425584a3dc4aa9b1430a2203ad38be
Autor:
Benjamin O’Driscoll
Publikováno v:
SoftwareX, Vol 15, Iss , Pp 100757- (2021)
Graphene Field Effect Transistors (GFETs) are active electronic components which exploit the modulation of charge carriers in a graphene channel for a wide variety of applications such as electronic switching, amplification and biosensing. Herein des
Externí odkaz:
https://doaj.org/article/7332097271f34f919dd5885d5467b5a6
Akademický článek
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Akademický článek
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Autor:
Marco A. Giambra, Christian Benz, Fan Wu, Maximillian Thurmer, Geethu Balachandran, Antonio Benfante, Riccardo Pernice, Himadri Pandey, Muraleetharan Boopathi, Min-Ho Jang, Jong-Hyun Ahn, Salvatore Stivala, Enrico Calandra, Claudio Arnone, Pasquale Cusumano, Alessandro Busacca, Wolfram H. P. Pernice, Romain Danneau
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 964-968 (2019)
In this work, we report on the design, fabrication and characterization of Metal-Oxide Graphene Field-effect Transistors (MOGFETs) exploiting novel clamped gate geometries aimed at enhancing the device transconductance. The fabricated devices employ
Externí odkaz:
https://doaj.org/article/ff75c2778bcb467b9c962da0235b7028
Autor:
Naruto Miyakawa, Ayumi Shinagawa, Yasuko Kajiwara, Shota Ushiba, Takao Ono, Yasushi Kanai, Shinsuke Tani, Masahiko Kimura, Kazuhiko Matsumoto
Publikováno v:
Sensors, Vol 21, Iss 22, p 7455 (2021)
Solution-gated graphene field-effect transistors (SG-GFETs) provide an ideal platform for sensing biomolecules owing to their high electron/hole mobilities and 2D nature. However, the transfer curve often drifts in an electrolyte solution during meas
Externí odkaz:
https://doaj.org/article/80d249246499424abb92087fe24f023a
Autor:
Antonio Benfante, Marco A. Giambra, Riccardo Pernice, Salvatore Stivala, Enrico Calandra, Antonino Parisi, Alfonso C. Cino, Simone Dehm, Romain Danneau, Ralph Krupke, Alessandro C. Busacca
Publikováno v:
IEEE Photonics Journal, Vol 10, Iss 2, Pp 1-7 (2018)
In this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate em
Externí odkaz:
https://doaj.org/article/0b7da53d4cc54971a4eacb465415dd96