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pro vyhledávání: '"gradual failure reliability"'
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 20, Iss 4, Pp 36-43 (2022)
When evaluating the individual reliability of semiconductor devices by gradual failures for a given operating time, the value of the electrical parameter of a particular instance for this operating time is predicted using the simulation method. To ob
Externí odkaz:
https://doaj.org/article/f7c51d510fb14ab99b1354c3e9dc8e43