Independent Geometrical Control of Spin and Charge Resistances in Curved Spintronics

Autor: Mario Cuoco, Ivan J. Vera-Marun, K. S. Das, Denys Makarov, Bart J. van Wees, Paola Gentile, Carmine Ortix

Publikováno v: Das, K S, Makarov, D, Gentile, P, Wees, J V, Ortix, C & Vera-Marun, I J 2019, ' Independent geometrical control of spin and charge resistances in curved spintronics ', Nano Letters, vol. 19, no. 10, pp. 6839-6844 . https://doi.org/10.1021/acs.nanolett.9b01994
Nano Letters 19(2019), 6839
Nano Letters
Nano Letters, 19(10), 6839-6844. AMER CHEMICAL SOC
Nano Letters, 19(10), 6839. American Chemical Society

Spintronic devices operating with pure spin currents represent a new paradigm in nanoelectronics, with higher energy efficiency and lower dissipation as compared to charge currents. This technology, however, will be viable only if the amount of spin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e104665b9323a81112728bad86c52b2a
https://hdl.handle.net/11370/98673efd-3eeb-434f-a3a2-7594ccf1032b

An integrated control strategy to solve the disturbance decoupling problem for max-plus linear systems with applications to a high throughput screening system

Autor: Laurent Hardouin, Carlos Andrey Maia, Ying Shang, Mehdi Lhommeau

Publikováno v: Automatica
Automatica, Elsevier, 2016, pp.338-348. ⟨10.1016/j.automatica.2015.10.030⟩

International audience; This paper presents the new investigations on the disturbance decoupling problem (DDP) for the geometric control of max-plus linear systems. The classical DDP concept in the geometric control theory means that the controlled o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::acc52ab6bc2de8cf1d66848ad044ea98
https://doi.org/10.1016/j.automatica.2015.10.030

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Geometrical Control of 3C and 6H-SiC Nucleation on Low Off-Axis Substrates

Autor: Haiyan Ou, Mikael Syväjärvi, Yiyu Ou, Rositza Yakimova, Satoshi Kamiyama, Valdas Jokubavicius, Rickard Liljedahl

Growth of 3C or 6H-SiC epilayers on low off-axis 6H-SiC substrates can be mastered by changing the size of the on axis plane formed by long terraces in the epilayer using geometrical control. The desired polytype can be selected in thick (~200 µm) l

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::78c183eb61763f62f5f30bb4bc1fef64
http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-73704

numerical detection of small conductivity imperfections in 2D and 3D by a dynamical method based on the wave equation and the geometrical control

Autor: Duval, Jean-Baptiste

Publikováno v: Mathématiques [math]. Université de Picardie Jules Verne, 2009. Français

In this thesis, we consider the numerical solution, in two- and three- dimensional bounded domains, of the inverse problem for identifying the location of small-volume, conductivity imperfections in a medium with homogeneous background. The identific

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______212::4d4133b4d3a39448c257adaf72baf336
https://tel.archives-ouvertes.fr/tel-00429530/document