Zobrazeno 1 - 7
of 7
pro vyhledávání: '"ge/sige quantum well"'
Publikováno v:
Nanophotonics, Vol 10, Iss 6, Pp 1765-1773 (2021)
We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with d
Externí odkaz:
https://doaj.org/article/1b05aaa5d429441c92fdcc8c51348790
Publikováno v:
Nanophotonics, Vol 10, Iss 6, Pp 1765-1773 (2021)
We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ddb573424384a6cf9e7e923c0925be1f
https://doi.org/10.1515/nanoph-2021-0007
https://doi.org/10.1515/nanoph-2021-0007
Autor:
Virgilio, M., Ortolani, M., Teich, M., Winnerl, S., Helm, M., Sabbagh, D., Capellini, G., Seta, M.
Publikováno v:
Physical Review B 89(2014), 045311
In this paper, we have experimentally and numerically studied the nonradiative intersubband (ISB) relaxation in n-type Ge/SiGe quantum well (QW) systems. Relaxation times have been probed by means of pump-probe experiments. An energy balance model ha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4577::47d5509be9002269c0eab70e41c44082
https://www.hzdr.de/publications/Publ-20028-1
https://www.hzdr.de/publications/Publ-20028-1
Autor:
Delphine Marris-Morini, Samson Edmond, Jean-René Coudevylle, Giovanni Isella, Xavier Le Roux, Daniel Chrastina, Eric Cassan, Papichaya Chaisakul, Laurent Vivien
Publikováno v:
ResearcherID
We report room-temperature quantum-confined Stark effect in Ge/SiGe multiple quantum wells (MQWs) with light propagating parallel to the plane of the Ge/SiGe MQWs for applications in integrated photonics. Planar waveguides embedded in a p-i-n diode a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7aaf934486f98c80595ad64c3c81580b
http://hdl.handle.net/11311/610304
http://hdl.handle.net/11311/610304
Autor:
Daniel Chrastina, Xavier Le Roux, Eric Cassan, Johann Osmond, Papichaya Chaisakul, Delphine Marris-Morini, Laurent Vivien, E. Gatti, Giovanni Isella, Samson Edmond
Publikováno v:
ResearcherID
We investigate the room-temperature quantum-confined Stark effect in Ge/SiGe multiple quantum wells (MQWs) grown by low-energy plasma-enhanced chemical vapor deposition. The active region is embedded in a p-i-n diode, and absorption spectra at differ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::25029bb2c51be524096ce78f057393a0
http://hdl.handle.net/11311/581925
http://hdl.handle.net/11311/581925
Autor:
Miura, N., Kozlova, N., Dörr, K., Freudenberger, J., Schultz, L., Drachenko, O., Sawano, K., Shiraki, Y.
Publikováno v:
Journal of Low Temperature Physics 159(2010), 222-225
9th International Conference on Research in High Magnetic Fields, 22.-25.07.2009, Dresden, GermanyJournal of low temperature physics
9th International Conference on Research in High Magnetic Fields, 22.-25.07.2009, Dresden, GermanyJournal of low temperature physics
Shubnikov-de Haas oscillation and cyclotron resonance were studied for high mobility p-type Ge channels in strained Ge/Si1-xGex quantum wells (well width was 7.5 nm). The samples were grown on Si (001) substrates by gas source MBE. The width of the q
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::b24c8f9240abd27635a8acac2e0f867b
https://www.hzdr.de/publications/Publ-13932-1
https://www.hzdr.de/publications/Publ-13932-1
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