Zobrazeno 1 - 10
of 16 565
pro vyhledávání: '"gate oxide"'
Autor:
Vakkalakula Bharath Sreenivasulu, M. Prasad, Epuri Deepthi, Aruru Sai Kumar, S. Sudheer Mangalampalli
Publikováno v:
IEEE Access, Vol 12, Pp 144479-144488 (2024)
A Rectangular core-shell (RCS) is analyzed on vertically stacked gate oxide junctionless nanosheet along with doping and gate/dielectric engineering. This paper also proposes an N-type three fins vertically stacked with gate oxide stack junctionless
Externí odkaz:
https://doaj.org/article/7d3851116b084c9b970f63b7f0c1bca7
Publikováno v:
IEEE Access, Vol 12, Pp 139427-139434 (2024)
The challenges associated with semiconductor are increasing because of the rapid changes in the semiconductor market and the extreme scaling of semiconductors, with some processes reaching their technological limits. In the case of gate dielectrics,
Externí odkaz:
https://doaj.org/article/e56a0bc5646e40389047d36e9136ccd7
Autor:
Shin-Ichiro Hayashi, Keiji Wada
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 5, Pp 709-717 (2024)
This paper proposes a gate drive circuit with a condition monitoring function for detecting the gate oxide degradation in silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs). Trapped charges in the gate oxide can ca
Externí odkaz:
https://doaj.org/article/92b2b972cf7c4562a26e606ad6b3be03
Publikováno v:
Energies, Vol 17, Iss 17, p 4319 (2024)
Various methods have been discussed in the literature regarding enabling the over-current (OC) capability of silicon carbide (SiC) MOSFETs. SiC MOSFETs can operate at up to 250 °C without failure. One of their features is to permit transient operati
Externí odkaz:
https://doaj.org/article/5f703c3f9390462ca614c52ef0896d20
Publikováno v:
Micromachines, Vol 15, Iss 8, p 985 (2024)
Insulated gate bipolar transistors (IGBTs) are widely used in power electronic devices, and their health prediction problems have attracted much attention in the field of power electronic equipment health management. The performance degradation of IG
Externí odkaz:
https://doaj.org/article/1ae20028c91f4b578bc8f55dde72451e
Autor:
Meng Zhang, Yamin Zhang, Baikui Li, Shiwei Feng, Mengyuan Hua, Xi Tang, Jin Wei, Kevin J. Chen
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 11, Pp 198-203 (2023)
In silicon carbide (SiC) planar insulated-gate bipolar transistor (IGBT), a large distance between neighboring p-bodies is beneficial to enhance the on-state conductivity modulation, but will expose the gate oxide to high electric field in off-state.
Externí odkaz:
https://doaj.org/article/1e76b83108aa442a80222ed664a1898d
Autor:
Sidhu, Ramneek, Rai, Mayank Kumar
Publikováno v:
Circuit World, 2021, Vol. 48, Issue 4, pp. 451-463.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/CW-09-2020-0233
Autor:
Andrew T. Binder, James A. Cooper, Jeffrey Steinfeldt, Andrew A. Allerman, Richard Floyd, Luke Yates, Robert J. Kaplar
Publikováno v:
e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 5, Iss , Pp 100218- (2023)
This paper describes a process for forming a buried field shield in GaN by an etch-and-regrowth process, which is intended to protect the gate dielectric from high fields in the blocking state. GaN trench MOSFETs made at Sandia serve as the baseline
Externí odkaz:
https://doaj.org/article/b7c8e9011ad2440cbab5a3681ba9f291
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Akademický článek
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