Zobrazeno 1 - 10
of 12 089
pro vyhledávání: '"gate dielectric"'
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 11, Pp n/a-n/a (2024)
Abstract Wafer‐scale deposition of high‐𝜅 gate dielectrics compatible with atomically thin van der Waals layered semiconductors (e.g., MoS2, WS2, WSe2) is urgently needed for practical applications of field effect transistors based on 2D mater
Externí odkaz:
https://doaj.org/article/3ebd7a7542bb4f6483b2720c43354ee4
Publikováno v:
Heliyon, Vol 10, Iss 11, Pp e32281- (2024)
We report the fabrication of two terminal and three terminal gas sensor using Al-doped ZnO nanostructured-films and polymer electrolyte gate dielectric on glass substrate using vacuum free chemical method. The Al doped ZnO films are characterized by
Externí odkaz:
https://doaj.org/article/cc47ff9b65854bc784199d7951810e7e
Autor:
Qiang Wang, Maolin Pan, Penghao Zhang, Luyu Wang, Yannan Yang, Xinling Xie, Hai Huang, Xin Hu, Min Xu
Publikováno v:
IEEE Access, Vol 12, Pp 16089-16094 (2024)
This article systematically studies the AlGaN/GaN MIS-HEMTs using the O2 plasma alternately treated Al2O3 as gate dielectric. The X-ray photoelectron spectroscopy (XPS) analyses and capacitance-voltage (C-V) measurement results show that the density
Externí odkaz:
https://doaj.org/article/04e1f1e0df6d4795934cd79e7a46f822
Publikováno v:
Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов, Iss 15, Pp 1070-1079 (2023)
The processes occurring in the silicon-oxygen-nitrogen system are of great practical importance, since dielectric layers made from materials of this system are widely used as barriers to the penetration of impurities, elements of storage capacitors,
Externí odkaz:
https://doaj.org/article/f9aa14d19f9f43f0a3d0e514c8581282
Publikováno v:
Technologies, Vol 12, Iss 7, p 102 (2024)
We propose a technique for the wafer-level testing of the gate dielectrics of metal–insulator–semiconductor (MIS) devices by the high-field injection of electrons into the dielectric using a mode of increasing injection current density up to a se
Externí odkaz:
https://doaj.org/article/9933ac09d686452c8445d01456be79d2
Publikováno v:
Nanomaterials, Vol 14, Iss 6, p 488 (2024)
Organic–inorganic hybrid dielectric nanomaterials are vital for OTFT applications due to their unique combination of organic dielectric and inorganic properties. Despite the challenges in preparing stable titania (TiO2) nanoparticles, we successful
Externí odkaz:
https://doaj.org/article/175ccf6ffdba433b9cf44b023679f297
Autor:
Jinha Ha, Dongkyu Kim, Hyunjin Park, Sungmi Yoo, Yujin So, Jinsoo Kim, Jongmin Park, Jong Chan Won, Yun Ho Kim
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 11, Pp n/a-n/a (2023)
Abstract Here, the utilization of a highly uniform water‐borne polyimide (W‐PI) thin film as a gate dielectric layer for large‐scale organic thin film transistors (OTFTs) exceeding 100 cm2 is presented, employing the bar‐coating technique. Th
Externí odkaz:
https://doaj.org/article/ed10d292d02346a889f10d069c50ba0f
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 2 (2023)
The evaluation of the world’s first MOSFETs with epitaxially-grown rare-earth high-k gate dielectrics is the main issue of this work. Electrical device characterization has been performed on MOSFETs with high-k gate oxides as well as their referenc
Externí odkaz:
https://doaj.org/article/6692ced7642140c19136d5dfd622e1e7
Publikováno v:
Crystals, Vol 14, Iss 2, p 190 (2024)
Ultrathin encapsulation strategies show huge potential in wearable and implantable electronics. However, insightful efforts are still needed to improve the electrical and mechanical characteristics of encapsulated devices. This work introduces Al2O3/
Externí odkaz:
https://doaj.org/article/5455c70fe8ec46fc9fd2409a7e28e228
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