Zobrazeno 1 - 10
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pro vyhledávání: '"gase"'
Publikováno v:
East European Journal of Physics, Iss 3, Pp 322-327 (2024)
The study analysed the impact of radiation defects on p-GaSe single crystal implanted with H+ ions (70 keV) on its charge transport mechanism. The research was conducted at 100 K and 300 K in an electric field of 102-104 V/cm. The study found that th
Externí odkaz:
https://doaj.org/article/cb72543f570648b1b2e33fc2c2000df1
Autor:
Rahim Salim Madatov, A.S. Alekperov, F.N. Nurmammadova, Narmin A. Ismayilova, Sakin H. Jabarov
Publikováno v:
East European Journal of Physics, Iss 1, Pp 322-326 (2024)
The electrical and photoelectric properties of anisotype n-Si−p-GaSe heterojunctions obtained as a result of the deposition of a GaSe thin layer on a cold n-Si single crystal substrate by the thermal evaporation method were studied. It was determin
Externí odkaz:
https://doaj.org/article/c5b986b0c1c9452793bab7c4aab63a60
Akademický článek
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Autor:
Arun Kumar, Aniello Pelella, Kimberly Intonti, Loredana Viscardi, Ofelia Durante, Filippo Giubileo, Paola Romano, Hazel Neill, Vilas Patil, Lida Ansari, Paul K. Hurley, Farzan Gity, Antonio Di Bartolomeo
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 8, Pp n/a-n/a (2024)
Abstract The family of 2D chalcogenide semiconductors has been growing rapidly. Metal monochalcogenides, for instance, can enable new possibilities in functional electronics and optoelectronics. A Gallium Selenide (GaSe) thin flake is used to fabrica
Externí odkaz:
https://doaj.org/article/296d6fa24d304c349bf3e3a969aa0cbd
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 15, Pp n/a-n/a (2024)
Abstract Group IIIA metal chalcogenides are an auspicious material system due to their variability of properties and hence the multitude of application options, for example, in the fields of optoelectronic, thermoelectric, piezo‐, and ferroelectric
Externí odkaz:
https://doaj.org/article/17920b42cb5d4d7ab800617795af41cd
Autor:
Long V. Le, Tran Thi Thu Huong, Tien-Thanh Nguyen, Xuan Au Nguyen, Thi Huong Nguyen, Sunglae Cho, Young Dong Kim, Tae Jung Kim
Publikováno v:
Crystals, Vol 14, Iss 6, p 539 (2024)
We report the absorption and photoluminescence spectra of GaSe single crystals in the near-edge region. The temperatures explored the range from 17 to 300 K. Specifically, at a temperature of 17 K, the photoluminescence spectrum reveals an interestin
Externí odkaz:
https://doaj.org/article/6a6029dad70f4598a2d92c64056cf89f
Publikováno v:
Journal of Pediatric Emergency and Intensive Care Medicine, Vol 10, Iss 1, Pp 44-47 (2023)
One of the most common health problems today is volatile substance abuse and toxic gas inhalation. Butane gas, also known as lighter gas, is increasingly used because it causes euphoria, pleasure and joy among adolescents. The most important reasons
Externí odkaz:
https://doaj.org/article/58ce44ee89ed4ec5a60b00199d873903
Autor:
Long V. Le, Tien-Thanh Nguyen, Xuan Au Nguyen, Do Duc Cuong, Thi Huong Nguyen, Van Quang Nguyen, Sunglae Cho, Young Dong Kim, Tae Jung Kim
Publikováno v:
Nanomaterials, Vol 14, Iss 10, p 839 (2024)
We report the temperature dependences of the dielectric function ε = ε1 + iε2 and critical point (CP) energies of the uniaxial crystal GaSe in the spectral energy region from 0.74 to 6.42 eV and at temperatures from 27 to 300 K using spectroscopic
Externí odkaz:
https://doaj.org/article/28fadc89f56e436bbed12a35ea15eea1
Akademický článek
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