Zobrazeno 1 - 10
of 3 284
pro vyhledávání: '"gallium nitride (GaN)"'
Publikováno v:
e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 8, Iss , Pp 100574- (2024)
The research work proposes an efficient Gallium Nitride (GaN) based isolated bidirectional DC-DC (IBDC)-Triple Active Bridge (TAB) based multi-port converter (MPC) for electric vehicle (EV) charging. The developed GaN IBDC-TAB based MPC utilizes fewe
Externí odkaz:
https://doaj.org/article/764070ffe462461a8bdcdb78e92132d5
Publikováno v:
IEEE Access, Vol 12, Pp 169533-169544 (2024)
The integration of Wide Bandgap (WBG) semiconductors has enhanced the performance of switching power supplies in terms of both efficiency and power density. However, the fast-switching dynamics of these devices, particularly in Gallium Nitride (GaN)
Externí odkaz:
https://doaj.org/article/9c41a38879c94daea25794a92dd6853f
Publikováno v:
CSEE Journal of Power and Energy Systems, Vol 10, Iss 4, Pp 1816-1833 (2024)
With high-frequency, low power dissipation and high-efficiency characteristics, Gallium nitride (GaN) power devices are of significant benefit in designing high-speed motor drives, as they improve performance and reduce weight. However, due to the ca
Externí odkaz:
https://doaj.org/article/a16b3b251e784bf781fba8ae7ccfdaca
Publikováno v:
IEEE Access, Vol 12, Pp 43089-43108 (2024)
This article presents a comprehensive design framework and realization approach for a state-of-the-art, compact, ultra-lightweight, highly efficient, cost-effective S-band gallium-nitride (GaN) dual transmit/receive (T/R) module. The T/R module desig
Externí odkaz:
https://doaj.org/article/a68f6bb626194fd68e9676c3a980995d
Autor:
Naveed Ishraq, Ayan Mallik
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 5, Pp 214-231 (2024)
In this article, a high-efficiency and high-density 2.5 kW four-level interleaved flying capacitor multilevel (FCML) totem-pole bridgeless power-factor-correction (PFC) rectifier with 200 V GaN devices is analyzed, designed, and tested. This 2.5 kW f
Externí odkaz:
https://doaj.org/article/28bc66025ef04a939efa3cd8416d4ac3
Publikováno v:
Applied Sciences, Vol 14, Iss 20, p 9406 (2024)
In the rapidly advancing field of 5G technology, efficient thermal management is essential for enhancing the performance and reliability of high-power-density integrated circuits (ICs). This paper introduces an innovative approach to cooling these cr
Externí odkaz:
https://doaj.org/article/552f50e250c546a3b5da28bfe47070dc
Publikováno v:
Alexandria Engineering Journal, Vol 74, Iss , Pp 627-641 (2023)
This paper studies and evaluates the advanced wide bandgap (WBG) semiconductor switches in DC drives system applied to a solar power tracker. Namely, Silicon Carbide (SiC)-based MOSFETs and Gallium Nitride (GaN)-based enhancement-mode high-electron-m
Externí odkaz:
https://doaj.org/article/80a0a4b7908a40f583e5077436bc38ac
Publikováno v:
Next Nanotechnology, Vol 5, Iss , Pp 100056- (2024)
The micro-light emitting diode (µLED) technology is poised to revolutionise display applications through the introduction of nanomaterials and Group III-nitride nanostructures. This review charts state-of-the-art in this important area of micro-LEDs
Externí odkaz:
https://doaj.org/article/7315cf75b92c4cf687285080f7245846
Publikováno v:
Circuit World, 2021, Vol. 49, Issue 2, pp. 167-173.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/CW-07-2020-0157
Publikováno v:
e-Prime: Advances in Electrical Engineering, Electronics and Energy, Vol 5, Iss , Pp 100208- (2023)
Lattice-mismatched Al1-xInxN layers grown on GaN and with varying x are thermally oxidized to understand how alloy content affects the oxidation process and oxide films. The samples are oxidized in a horizontal tube furnace at 830 oC and 900 oC for 2
Externí odkaz:
https://doaj.org/article/3f270a1cbdfb4c28b9d9ebb8ecb5e750